scispace - formally typeset
Proceedings ArticleDOI

A compact, high voltage 25 kW, 50 kHz DC-DC converter based on SiC JFETs

TLDR
In this article, a dual active bridge, which can transfer 25 kW bidirectionally between a 5 kV and a 700 V dc bus at a switching frequency of 50 kHz, is presented.
Abstract
In the area of power electronics there is a general trend to higher power densities and efficiency. In order to continue this trend new devices, which enable high switching frequencies at higher power levels or show reduced losses at moderate switching frequencies are required. High voltage switches based on a series connection of SiC JFETs and one MOSFET in cascode connection meet these demands. For investigating the performance of the SiC based switch and its influence on the power density/efficiency a dual active bridge, which could transfer 25 kW bidirectionally between a 5 kV and a 700 V dc bus at a switching frequency of 50 kHz, is presented in this paper. There, especially the design of the high voltage/high frequency transformer and the switching as well as the static behaviour of the SiC switch is investigated in detail by simulations and experimental results in this paper.

read more

Citations
More filters
Journal ArticleDOI

Overview of Dual-Active-Bridge Isolated Bidirectional DC–DC Converter for High-Frequency-Link Power-Conversion System

TL;DR: In this paper, the dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit of high frequency-link (HFL) power conversion systems.
Journal ArticleDOI

SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

TL;DR: The impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems.
Journal ArticleDOI

Pwm control of dual active bridge: Comprehensive analysis and experimental verification

TL;DR: In this article, a comprehensive analysis and experimental results with pulsewidth-modulation (PWM) control of the dual-active-bridge (DAB) topology is presented.
Journal ArticleDOI

High-Power Bidirectional DC–DC Converter for Aerospace Applications

TL;DR: In this article, a steady-state analysis of the bidirectional dual active bridge (DAB) dc-dc converter is presented, which produces equations for RMS and average device currents, and rms and peak inductor/transformer currents.
Proceedings ArticleDOI

PWM control of dual active bridge: comprehensive analysis and experimental verification

TL;DR: In this paper, the authors present a comprehensive analysis and experimental results with PWM control of the dual active bridge (DAB) topology for high power dc-dc conversion, and propose an optimum PWM scheme that extends the soft switching range, reduces rms and peak currents at low loads, and results in significant size reduction of the transformer.
References
More filters
Proceedings ArticleDOI

Accurate prediction of ferrite core loss with nonsinusoidal waveforms using only Steinmetz parameters

TL;DR: An improved calculation of ferrite core loss for nonsinusoidal waveforms separates a flux trajectory into major and minor loops via a new recursive algorithm that is highly accurate and outperforms two previous methods for measured data.
Proceedings ArticleDOI

Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution - Comparison of Converters using Si and SiC Devices

TL;DR: In this paper, two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density.
Proceedings ArticleDOI

SiC power devices with low on-resistance for fast switching applications

TL;DR: In this paper, the authors presented fast recovery of the 6H-SiC MOSFET reverse diode (Q/sub rr/ 30 nC, t/subrr/ 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs.
Related Papers (5)