Journal ArticleDOI
A Planar Gunn Diode Operating Above 100 GHz
Ata Khalid,N. J. Pilgrim,G M Dunn,Martin Christopher Holland,C.R. Stanley,Iain G. Thayne,David R. S. Cumming +6 more
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TLDR
In this paper, the experimental realization of a 108 GHz planar Gunn diode structure fabricated in GaAs/AlGaAs was presented, where the material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography.Abstract:
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.read more
Citations
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Journal ArticleDOI
Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes
TL;DR: A microscopic analysis of self-generated terahertz current oscillations that take place in planar InAlAs/InGaAs slot diodes operating under dc bias is presented in this paper.
Journal ArticleDOI
Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
Ata Khalid,G. M. Dunn,R F Macpherson,Stephen Thoms,Douglas Macintyre,Chong Li,Matthew J. Steer,V. Papageorgiou,I.G. Thayne,Martin Kuball,C. H. Oxley,Miguel Montes Bajo,A. Stephen,James Glover,David R. S. Cumming +14 more
TL;DR: In this paper, the authors presented results of the first ever THz submicron planar planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz.
Journal ArticleDOI
Gunn oscillations in a self-switching nanodiode
K. Y. Xu,Guoxiu Wang,Aimin Song +2 more
TL;DR: In this article, the feasibility of Gunn oscillations in a planar nanoscale unipolar diode or a self-switching device (SSD) was analyzed using Monte Carlo simulations.
Journal ArticleDOI
Gunn oscillations in planar heterostructure diodes
TL;DR: Gunn oscillations have been observed and modelled, using a Monte Carlo method, in planar semiconductor GaAs/AlGaAs heterostructure diodes in this paper.
Journal ArticleDOI
$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
Ata Khalid,Chong Li,V. Papageogiou,G. M. Dunn,Matthew J. Steer,I.G. Thayne,Martin Kuball,C. H. Oxley,Miguel Montes Bajo,A. Stephen,James Glover,David R. S. Cumming +11 more
TL;DR: In this article, the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz, were presented.
References
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Journal ArticleDOI
Microwave oscillations of current in III–V semiconductors
TL;DR: In this article, the authors described a new phenomenon in the electrical conductivity of certain III-V semiconductors, where when the applied electric field exceeds a critical value, oscillations of extremely high frequency appear in the specimen current.
Journal ArticleDOI
Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz
TL;DR: In this article, a GaAs∕Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation is presented.
Journal ArticleDOI
Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H2O2 and de-ionized H2O/buffered oxide etch
TL;DR: In this paper, a solution system of citric acid/H2O2 and de-ionized H2O/buffered oxide etch is used to provide good selective wet etching of AlGaAs/GaAs structures.
Journal ArticleDOI
Submillimeter-wave InP Gunn devices
Heribert Eisele,R. Kamoua +1 more
TL;DR: In this article, two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are proposed for operation at submillimeter-wave frequencies.
Journal ArticleDOI
High-performance second-harmonic operation W-band GaAs Gunn diodes
S.J.J. Teng,R.E. Goldwasser +1 more
TL;DR: In this article, the second-harmonic operation W-band (75-110 GHz) GaAs Gunn diodes were used to achieve DC-to-Rf conversion efficiency of 2.7 and 2.3 percent.