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A Spin Esaki Diode

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TLDR
In this article, an interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn)As to the conduction band of n+GaAs.
Abstract
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga, Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with ±6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga, Mn)As.

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Citations
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Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI

Wide band gap ferromagnetic semiconductors and oxides

TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
Journal ArticleDOI

Dilute ferromagnetic semiconductors: Physics and spintronic structures

TL;DR: In this article, a review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering.
Journal ArticleDOI

Ferromagnetic semiconductors

Tomasz Dietl
TL;DR: The current status and prospects of research on ferromagnetism in semiconductors are reviewed in this article, where the authors present a quantitative comparison between experimental and theoretical results for Mn-based III-V and II-VI compounds, showing that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures.
Journal ArticleDOI

Semiconductor Spintronics

TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
References
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Journal ArticleDOI

Injection and detection of a spin-polarized current in a light-emitting diode

TL;DR: In this article, the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner to inject spin-polarized charge into a non-magnetic semiconductor device.
Journal ArticleDOI

Room-temperature spin injection from Fe into GaAs.

TL;DR: Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe with circular polarization degree, revealing a spin injection efficiency of 2%.
Journal ArticleDOI

Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)as

TL;DR: In this paper, local Mn moments and holes produce two spectroscopically distinct contributions, whose properties reveal an antiferromagnetic Mn-hole alignment in the ferromagnetic state.
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MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As

TL;DR: In this article, the growth of hybrid ferromagnetic/non-magnetic semiconductor pn junction light emitting diodes (LEDs) is presented. And the currentvoltage characteristics and the electroluminescence (EL) spectra were measured at temperatures from 5 K to room temperature.
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