Proceedings ArticleDOI
A study of blister formation in ALD Al 2 O 3 grown on silicon
Bart Vermang,Hans Goverde,Veerle Simons,Ingrid De Wolf,Johan Meersschaut,Shuji Tanaka,Joachim John,Jef Poortmans,R. Mertens +8 more
- pp 001135-001138
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TLDR
In this article, the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si was investigated under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile.Abstract:
This work investigates the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al 2 O 3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H 2 and H 2 O and (ii) Al 2 O 3 being a diffusion barrier.read more
Citations
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Journal ArticleDOI
Development of rear surface passivated Cu(In,Ga)Se2 thin film solar cells with nano-sized local rear point contacts
TL;DR: In this article, a novel rear contacting structure for copper indium gallium (di)selenide (CIGS) thin film solar cells is discussed theoretically, developed in an industrially viable way, and demonstrated in tangible devices.
Book
New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface
TL;DR: In this article, the problem of passivation at the surface of crystalline silicon solar cells is addressed, and a high-throughput, industrially compatible deposition method for Al2O3 is reported.
Journal ArticleDOI
Large-Area n-Type PERT Solar Cells Featuring Rear p + Emitter Passivated by ALD Al 2 O 3
Emanuele Cornagliotti,A. Uruena,Monica Aleman,Aashish Sharma,Loic Tous,Richard Russell,Patrick Choulat,Jia Chen,Joachim John,Michael Haslinger,Filip Duerinckx,Bas Dielissen,Roger Gortzen,Lachlan E. Black,Jozef Szlufcik +14 more
TL;DR: In this article, a rear boron emitter is passivated by a stack of ALD Al2 O3 and PECVD SiO x, which can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2.
Journal ArticleDOI
Fracture properties of atomic layer deposited aluminum oxide free-standing membranes
TL;DR: The fracture strength of Al2O3 membranes deposited by atomic layer deposition at 110, 150, 200, and 300 °C was investigated in this paper, and the fracture strength was found to be in the range of 2.25-3.00
Journal ArticleDOI
Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system
TL;DR: An ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by the group, is hired to deposit Al2O3 films and shows an obvious gain in open-circuit voltage (Voc) and short-circuits current (Jsc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively.
References
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Journal ArticleDOI
Gas Diffusion Barriers on Polymers Using Multilayers Fabricated by Al2O3 and Rapid SiO2 Atomic Layer Deposition
Arrelaine A. Dameron,Stephen D. Davidson,Beau B. Burton,Peter F. Carcia,R. Scott McLean,Steven M. George +5 more
TL;DR: In this paper, multilayers of Al2O3 ALD and SiO2 ALD were grown on Kapton and heat-stabilized polyethylene naphthalate substrates.
Journal ArticleDOI
The mechanical properties of atomic layer deposited alumina for use in micro- and nano-electromechanical systems
Marie K. Tripp,Marie K. Tripp,Christoph Stampfer,David C. Miller,T. Helbling,Cari F. Herrmann,Christofer Hierold,Ken Gall,Steven M. George,Victor M. Bright +9 more
TL;DR: In this article, Young's modulus, Berkovitch hardness, universal hardness and the intrinsic in-plane stress for AL2O3 were determined using several measurement techniques including: instrumented nanoindentation, bulge testing, pointer rotation, and nanobeam deflection.
Journal ArticleDOI
A theoretical and numerical study of a thin clamped circular film under an external load in the presence of a tensile residual stress
TL;DR: In this paper, the elastic responses of the blistering films are shown to be linear when the film is thick, relatively rigid, or subjected to a large residual stress, and cubic when the films is thin, flexible, or under a small residual stress.
Journal ArticleDOI
Mechanical stress as a function of temperature in aluminum films
Donald S. Gardner,Paul A. Flinn +1 more
TL;DR: In this article, a measurement technique based on the determination of wafer curvature with a laser scanning device is utilized to directly measure the film stress in situ as a function of temperature during thermal cycling.
Journal ArticleDOI
Thermal Expansion of Al2O3, BeO, MgO, B4C, SiC, and TiC Above 1000°C.
TL;DR: In this paper, the average coefficients of linear thermal expansion are given as follows:==================¯¯¯¯¯¯¯¯¯¯ ¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯