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Journal ArticleDOI

A unified simulation of Schottky and ohmic contacts

Kazuya Matsuzawa, +2 more
- 01 Jan 2000 - 
- Vol. 47, Iss: 1, pp 103-108
Abstract: 
The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and resistances under high impurity concentration conditions are reasonable, compared with measurements. As examples of application to actual devices, the influence of the contact resistance on salicided MOSFETs with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTTs) from the short-channel effect (SCE) are demonstrated.

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Citations
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Patent

Insulated gate field effect transistor having passivated schottky barriers to the channel

Daniel E. Grupp, +1 more
TL;DR: In this paper, the Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 Ω-μm 2.
Patent

Semiconductor device having IGBT and diode

Yoshihiko Ozeki, +2 more
TL;DR: In this paper, the authors describe a semiconductor device consisting of a substrate having a first side and a second side; an IGBT; and a diode, and the substrate includes a first layer, a second layer and a third layer.
Journal ArticleDOI

Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications

R. Jhaveri, +2 more
- 01 Jan 2009 - 
TL;DR: An asymmetric Schottky tunneling source SOI MOSFET (STS-FET) was proposed in this article, which has the source/drain regions replaced with silicide as opposed to highly doped silicon in conventional devices.
Patent

Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

Daniel E. Grupp, +1 more
TL;DR: In this article, an electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor is described. But the interface layer does not have an interface mechanism.
Journal ArticleDOI

Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier lowering

Reinaldo A. Vega
- 19 Jun 2006 - 
TL;DR: In this paper, an Airy function transfer matrix tunneling model and the Wentzel-Kramers-Brillouin (WKB) model have been compared in the application to Schottky field effect transistors (SFETs) with and without the incorporation of SBL.
References
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Journal ArticleDOI

Measurement of the ionization rates in diffused silicon p-n junctions

R. van Overstraeten, +1 more
- 01 May 1970 - 
TL;DR: In this paper, an improved method is presented for calculating the ionization rates αn and αp from charge multiplication measurements on diffused silicon p-n junctions, where the real impurity profile is approximated by an exponential function whose parameters are calculated from capacitance measurements; the ratio αp/αn as a function of the electric field is calculated from multiplication measurements.
Journal ArticleDOI

Current transport in metal-semiconductor barriers

C.R. Crowell, +1 more
- 01 Nov 1966 - 
TL;DR: In this paper, a theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force.
Journal ArticleDOI

Reverse current-voltage characteristics of metal-silicide Schottky diodes

J.M. Andrews, +1 more
- 01 Jul 1970 - 
TL;DR: In this paper, the soft behavior of reverse biased Schottky barrier diodes has often been difficult to interpret quantitatively, and the development of metal-silicide devices with diffused guard rings has made it possible to verify experimentally an advanced theoretical model.
Journal ArticleDOI

Silicon field-effect transistor based on quantum tunneling

J. R. Tucker, +2 more
- 01 Aug 1994 - 
TL;DR: In this article, gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel was explored to forestall short-channel effects.
Journal ArticleDOI

Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

Chung-Kuang Huang, +2 more
- 01 Apr 1998 - 
TL;DR: In this article, the authors present simulation results of a silicon-based metal-oxide-semiconductor field effect transistor (MOSFET) with metal/silicon Schottky junctions.