Journal ArticleDOI
Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs
Giovanni Crupi,Dongping Xiao,Dominique Schreurs,Ernesto Limiti,Alina Caddemi,W. De Raedt,Marianne Germain +6 more
TLDR
In this article, the authors focused on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions.Abstract:
This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward "cold" model for modeling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHzread more
Citations
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Journal ArticleDOI
An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices
TL;DR: In this article, a highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit parameters of a GaN high electron-mobility transistor device is presented.
Journal ArticleDOI
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$
S. Bouzid-Driad,Hassan Maher,Nicolas Defrance,Virginie Hoel,J.C. De Jaeger,M. Renvoise,P. Frijlink +6 more
TL;DR: In this article, a GaN/GaN high-electron-mobility transistors (HEMTs) on high-resistive silicon substrate with a record maximum oscillation cutoff frequency FMAX was reported.
Journal ArticleDOI
An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects
Changsi Wang,Yuehang Xu,Xuming Yu,Chunjiang Ren,Zhensheng Wang,Haiyan Lu,Tangsheng Chen,Bin Zhang,Ruimin Xu +8 more
TL;DR: In this article, an electrothermal model for large signal equivalent circuit modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects is presented.
Journal ArticleDOI
Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies
TL;DR: In this article, the authors investigated differences brought about by different materials for devices implemented with a given mask set and showed that with newer material systems, models tend to provide poorer fits to the measured data.
Journal ArticleDOI
Neural approach for temperature-dependent modeling of GaN HEMTs
Zlatica Marinkovic,Giovanni Crupi,Alina Caddemi,Gustavo Avolio,Antonio Raffo,Vera Markovic,Giorgio Vannini,Dominique Schreurs +7 more
TL;DR: In this article, a neural approach for extracting a multi-bias model of a gallium nitride high electron-mobility transistors including the dependence on the ambient temperature is presented.
References
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Journal ArticleDOI
A new method for determining the FET small-signal equivalent circuit
TL;DR: In this article, a method to determine the small-signal equivalent circuit of FETs is proposed, which consists of a direct determination of both the extrinsic and intrinsic small signal parameters in a low-frequency band.
Journal ArticleDOI
A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
TL;DR: In this article, a high electron mobility transistor (HEMT) with extremely high-speed microwave capabilities is reported, which is based on a field effect transistor (FE transistor).
Journal ArticleDOI
A new small-signal modeling approach applied to GaN devices
Anwar Jarndal,Gunter Kompa +1 more
TL;DR: In this article, a new method for extracting the parasitic elements of the GaN device is developed based on two steps, which are: 1) using cold S-parameter measurements, high-quality starting values for the extrinsic parameters that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model are generated and 2) the optimal model parameter values are searched through optimization using the starting values already obtained.
Journal ArticleDOI
Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
TL;DR: In this paper, an improved three-step de-embedding method is proposed to subtract the influence of parasitics in the test-structure stemming from the contact pads, the metal interconnections and the silicon substrate.
Journal ArticleDOI
Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer
Joff Derluyn,Steven Boeykens,Kai Cheng,Raf Vandersmissen,Jo Das,Wouter Ruythooren,Stefan Degroote,Maarten Leys,Marianne Germain,Gustaaf Borghs +9 more
TL;DR: In this article, a Si3N4 passivation layer was used to reduce the relaxation, cracking, and surface roughness of the AlGaN layer and neutralize the charges at the top of the layer.