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Analysis of semiconductor microcavity lasers using rate equations

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TLDR
In this paper, the rate equations for a microcavity semiconductor laser are solved and the steady-state behavior of the laser and some of its dynamic characteristics are investigated, and it is shown that by manipulating the mode density and the spontaneous decay rates of the cavity modes, the threshold gain can be decreased and the modulation speed can be improved.
Abstract
The rate equations for a microcavity semiconductor laser are solved and the steady-state behavior of the laser and some of its dynamic characteristics are investigated. It is shown that by manipulating the mode density and the spontaneous decay rates of the cavity modes, the threshold gain can be decreased and the modulation speed can be improved. However, in order to fully exploit the possibilities which the modification of the spontaneous decay opens up, the active material volume in the cavity must be smaller than a certain value. Threshold current using different definitions, population inversion factor, L-I curves, linewidth, and modulation response are discussed. >

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Citations
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Proceedings ArticleDOI

Photonic crystal chips for optical communications and quantum information processing

TL;DR: In this article, the authors discuss recent progress on functional photonic crystals devices and circuits for classical and quantum information processing, and discuss the promise of quantum networks on multifunctional photonic crystal chips.
Proceedings ArticleDOI

Intra-cavity frequency doubling in photonic crystal nanocavity quantum dot lasers

TL;DR: In this article, the authors report visible light generation via intra-cavity frequency doubling in photonic crystal nanocavity quantum dot lasers, where a strong field enhancement in the nanocvity enables the efficient conversion process.
Journal ArticleDOI

Room temperature spontaneous emission in five‐micron‐long Fabry–Pérot vertical cavities

TL;DR: In this article, the effects on spontaneous emission of the precise placement of the GaAs active region and also the thickness of this region, as compared to the emitted wavelength, are demonstrated.
Journal ArticleDOI

Spontaneous emission in microcavities

TL;DR: In this paper, the transverse distributions of intensity inside and outside an optical cavity produced by spontaneous emission from atoms inside the cavity are reviewed and the mode properties inside a closed passive one-dimensional cavity are summarised and the spatial distributions of emitted light for a passive cavity with partially transmitting mirrors are discussed.
References
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Journal ArticleDOI

Electric field dependence of optical absorption near the band gap of quantum-well structures.

TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Journal ArticleDOI

Inhibited Spontaneous Emission

TL;DR: The radiative properties of an atom in a cavity differ fundamentally from the atom's radiative property in free space as mentioned in this paper. But the cavity causes slight shifts in the energies of the atom, analogous to radiative shifts.
Journal ArticleDOI

Observation of cavity-enhanced single-atom spontaneous emission

TL;DR: It has been observed that the spontaneous-emission lifetime of Rydberg atoms is shortened by a large ratio when these atoms are crossing a high-Q$ superconducting cavity tuned to resonance with a millimeter-wave transition between adjacent Ryd Berg states as mentioned in this paper.
Journal ArticleDOI

Inhibited spontaneous emission by a Rydberg atom.

TL;DR: Spontaneous radiation by an atom in a Rydberg state is inhibited by use of parallel conducting planes to eliminate the vacuum modes at the transition frequency.
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