Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals
Mathias Schubert,Mathias Schubert,Rafał Korlacki,Sean Knight,Tino Hofmann,Tino Hofmann,S. Schöche,Vanya Darakchieva,Erik Janzén,Bo Monemar,Bo Monemar,Daniela Gogova,Daniela Gogova,Quang Tu Thieu,Rie Togashi,Hironaru Murakami,Yoshinao Kumagai,Ken Goto,Akito Kuramata,Shigenobu Yamakoshi,Masataka Higashiwaki +20 more
TLDR
In this paper, the authors describe a general pathway to the analysis of long-wavelength experiments for monoclinic and triclinic crystal systems, and they report for the first time a complete set of phonon modes for the monOClinic phase of gallium oxide.Abstract:
There is growing interest in low-symmetry metal oxides because of their potential use in high-power electronics capable to sustain very high voltages. Very little is known about their fundamental physical properties, such as transverse and longitudinal optical phonon modes, dielectric constants, and how free charge carriers couple with lattice vibrations. This lack of information is partially due to the complexity by which these properties intertwine due to the low symmetry crystal systems. Here, the authors describe a general pathway to the analysis of long-wavelength experiments for monoclinic and triclinic crystal systems, and they report for the first time a complete set of phonon modes for the monoclinic phase of gallium oxide. These parameters may arrive just in time to support computational optimization of charge and heat transport for device designs. The concept for analysis of long wavelength properties in monoclinic and triclinic crystal systems can help access a widely uncharted field in condensed matter physics.read more
Citations
More filters
Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Guest Editorial: The dawn of gallium oxide microelectronics
Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
Journal ArticleDOI
β-Ga2O3 for wide-bandgap electronics and optoelectronics
TL;DR: In this paper, a review of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices is presented, including material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications.
Journal ArticleDOI
Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen,Joel B. Varley,A. Yu. Kuznetsov,Bengt Gunnar Svensson,Giovanni Alfieri,Andrei Mihaila,U. Badstübner,Lasse Vines +7 more
TL;DR: Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, this article identified two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3.
References
More filters
Book
Handbook of Ellipsometry
TL;DR: Polarized Light and Ellipsometry: Optical Physics of Materials- Data Analysis for Spectroscopic Ellipsometers- Optical Components and the Simple PCSA (polarizer, compensator, sample, analyzer) Ellipsometer as mentioned in this paper.
Book
Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons
TL;DR: In this article, the infrared model dielectric function was used for magneto-optic ellipsometry in Semiconductor Layer Structures and Zinsblende-Structure Materials (III-V), Wurtzite Structure Materials (Group III Nitrides, ZnO).