Journal ArticleDOI
Antimonide-based Diodes for Terahertz Mixers
R. Magno,James G. Champlain,H. S. Newman,Mario Ancona,James C. Culbertson,Brian R. Bennett,John Bradley Boos,Doe Park +7 more
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TLDR
In this article, a mesa diode was used as a terahertz mixer with a cutoff frequency of 6.5THz and a capacitance of 1.2fF∕μm2 for a 5μm diameter diode.Abstract:
Antimonide-based p+N junctions have been grown by molecular beam epitaxy and processed into diodes. The diodes have good rectification with ideality factors near 1, and high saturation current densities of 2.5×10−2A∕cm2. S-parameter measurements to 50GHz indicate a 1Ω series resistance and a capacitance of 1.2fF∕μm2 for a 5μm diameter mesa diode. A cutoff frequency of 6.5THz is estimated from the RC product. The high saturation current indicates that this diode will reach forward bias currents at substantially lower voltages than GaAs Schottky diodes. These properties suggest using the diode as a terahertz mixer.read more
Citations
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Journal ArticleDOI
THz Diode Technology: Status, Prospects, and Applications
TL;DR: The current status of diode technology is reviewed, detailing some of the different ways for fabricating THz chips and applications enabled by these diodes.
Journal ArticleDOI
Design and optimization of spectral beamsplitter for hybrid thermoelectric-photovoltaic concentrated solar energy devices
TL;DR: In this article, the design and optimization of a thin-film multilayer spectral beamsplitter for hybrid thermoelectric-photovoltaic (TE-PV) solar energy devices are considered.
Journal ArticleDOI
Heterodyne terahertz detection through electronic and optoelectronic mixers.
Yen-Ju Lin,Mona Jarrahi +1 more
TL;DR: This article describes how the inherent nonlinearity of a Schottky diode, superconductor-insulator-superconductor junction, hot electron bolometer, and field-effect transistor can be utilized to mix the received terahertz radiation with a reference local oscillator signal from a gas laser, quantum cascade laser, photomixer, and frequency multiplier and then down-convert it to a radio frequency signal.
Journal ArticleDOI
Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification
R. Casini,A. Di Gaspare,Ennio Giovine,Andrea Notargiacomo,Michele Ortolani,Vittorio Foglietti +5 more
TL;DR: In this paper, a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction was demonstrated, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias.
Book ChapterDOI
Terahertz Emitters, Detectors and Sensors: Current Status and Future Prospects
TL;DR: In this article, the authors present an upsurge of activity in the last five years due to the emergence of a wide range of new technologies for terahertz radiation.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Antimonide-based compound semiconductors for electronic devices: A review
TL;DR: In this article, the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors(HBTs) is reviewed.
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