Journal ArticleDOI
Atomic layer controlled growth of Si3N4 films using sequential surface reactions
TLDR
Si 3 N 4 thin films were deposited with atomic layer control on Si(100) substrates using sequential surface chemical reactions as mentioned in this paper, which was accomplished by separating the binary reaction 3SiCl 4 +4NH 3 →Si 3N 4 +12HCl into two half-reactions.About:
This article is published in Surface Science.The article was published on 1998-11-27. It has received 101 citations till now. The article focuses on the topics: Thin film & Layer (electronics).read more
Citations
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Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Book ChapterDOI
Atomic layer deposition
Mikko Ritala,Markku Leskelä +1 more
TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.
Journal ArticleDOI
ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements
TL;DR: In this paper, the growth rate and surface topography of pure oxide films were examined using ex situ ellipsometry, stylus profilometry and atomic force microscopy (AFM) techniques.
Patent
Method and apparatus for layer by layer deposition of thin films
TL;DR: In this paper, a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer-by-layer growth on a wafer is presented. But it does not consider the effect of the carrier gas.
References
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Journal ArticleDOI
Surface Chemistry for Atomic Layer Growth
TL;DR: In this article, the basic concepts of atomic layer growth using molecular precursors and binary reaction sequence chemistry are reviewed and the characteristics of film deposition using ALP are explored using recent examples for Al2O3 ALP.
Journal ArticleDOI
Atomic layer epitaxy
TL;DR: Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals.
Journal ArticleDOI
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry
TL;DR: In this article, Al2O3 films with precisely controlled thicknesses and excellent conformality were grown on Si(100) at low temperatures of 350-650 K using sequential surface chemical reactions.
Journal ArticleDOI
Silicon-29 NMR study of dehydrated/rehydrated silica gel using cross polarization and magic-angle spinning
Dean W. Sindorf,Gary E. Maciel +1 more
TL;DR: In this article, a /sup 29/Si NMR study was carried out on silica gel, using cross polarization and magic-angle spinning (CP/MAS), and spectral changes observed in these experiments could not be accounted for by a single structural model of the types that have been advanced previously for silica surfaces.
Journal ArticleDOI
Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4
TL;DR: In this article, group theory was employed to interpret the observed spectra of crystalline α- and β-Si 3 N 4, which exhibited two broad peaks centered at about 400 and 900 cm −1.