Journal ArticleDOI
Bandwidth enhancement in silicon metal-semiconductor-metal photodetector by trench formation
Jacob Y L Ho,Kam Sing Wong +1 more
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TLDR
In this article, a high-speed silicon metal-semiconductor-metal photodetector with novel structure is presented. But the structure of the diode is not described.Abstract:
We report on fabrication and characterization of a high-speed silicon metal-semiconductor-metal photodetector with novel structure. Metal contacts on the sidewalls of the interdigitated trenches are used to generate a highly uniform electric field well below the detector surface so that carriers deep within the semiconductor bulk can easily attain their saturation velocities. The detector, with 9-/spl mu/m-deep interdigitated trenches and a trench spacing of 1 /spl mu/m, has a pulse width of 28.2 ps and a -3-dB bandwidth of 2.2 GHz at 5 V. The responsivity measured at 790 nm is 0.14 A/W, corresponding to an external quantum efficiency of 22.1%. Our results also show that a bias as low as 2 V is sufficient for this diode to operate at high-speed without reducing responsivity.read more
Citations
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Fully embedded board-level guided-wave optoelectronic interconnects
Ray T. Chen,Lei Lin,Chulchae Choi,Yujie Liu,Bipin Bihari,Linghui Wu,Suning Tang,Randy W. Wickman,B. Picor,M.K. Hibb-Brenner,J. Bristow,Y.S. Liu +11 more
TL;DR: In this article, a fully embedded board-level guided-wave optical interconnection is presented to solve the packaging compatibility problem, where all elements involved in providing high-speed optical communications within one board are demonstrated.
Journal ArticleDOI
1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies
TL;DR: Experimental results from a monolithic CMOS photoreceiver realized in a 0.35-/spl mu/m production CMOS process, including a CMOSPhotodetector compatible with a high-volume high-yield CMos process, as well as the entire receiver circuit.
Journal ArticleDOI
Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications
TL;DR: In this article, an overview of recent results on high-speed germanium-on-silicon-oninsulator (Geon-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented.
Journal ArticleDOI
A high-speed, high-sensitivity silicon lateral trench photodetector
Min Yang,Kern Rim,Dennis L. Rogers,Jeremy D. Schaub,J.J. Welser,D.M. Kuchta,Diane C. Boyd,F. Rodier,Paul A. Rabidoux,J.T. Marsh,A.D. Ticknor,Qingyun Yang,A. Upham,S.C. Ramac +13 more
TL;DR: In this paper, a silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity is presented.
Journal ArticleDOI
Characteristics of MSM photodetectors with trench electrodes on p-type Si wafer
TL;DR: UMSM-PDs with a 70 nm i-a-Si:H overlayer, 1.45 /spl mu/m-deep recessed electrodes, and 3 /splmu/m finger width and spacing, had a responsivity of 0.25 A/W as measured with an 0.83-/spl µ/m incident semiconductor laser, and an internal quantum efficiency of 36%.
References
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Journal ArticleDOI
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
J.B.D. Soole,Hermann Schumacher +1 more
TL;DR: In this paper, a review of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system is discussed.
Journal ArticleDOI
Properties of alternately charged coplanar parallel strips by conformal mappings
Yu Chin Lim,R.A. Moore +1 more
TL;DR: In this paper, the equipotential surfaces and flux lines of alternately charged coplanar parallel strips most often encountered in these cases are determined with the aid of a sequence of conformal mappings.
Journal ArticleDOI
A novel high-speed silicon MSM photodetector operating at 830 nm wavelength
H.C. Lee,B. Van Zeghbroeck +1 more
TL;DR: In this article, a high-speed silicon photodetector that operates at a wavelength of 830 nm is reported, which is a promising candidate for monolithic optoelectronic receiver circuits for use in short distance optical communication systems and computer interconnects.
Journal ArticleDOI
A simple high-speed Si Schottky photodiode
TL;DR: In this paper, Ni-Si-Ni metal-semiconductor-metal (MSM) Schottky barrier photodetectors were fabricated, with a simple 3-level lithography process on bulk Si, in both simple-gap and interdigitated geometries with gap dimensions from 1 to 5 mu m.
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A novel high-speed silicon MSM photodetector operating at 830 nm wavelength
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