Journal ArticleDOI
Capacitance technique for the determination of interface state density of metal-semiconductor contact
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In this article, a capacitance technique to determine the interface state density of metal-semiconductor contact is developed which takes care of interfacial oxide layer and series resistance of the device.Abstract:
A capacitance technique to determine the interface state density of metal—semiconductor contact is developed which takes care of interfacial oxide layer and series resistance of the device. The technique is applied to Pt- and Co-nSi contacts, and the energy distributions of interface state density are determined. For both devices, the distribution is found to be initially flat, then increasing sharply with energy.read more
Citations
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Journal ArticleDOI
Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods
TL;DR: In this paper, the authors analyzed electrical properties in Au/SiO"2/n-Si (MOS) capacitors by using the high-low frequency (C"H"F-C"L"F) capacitance and conductance methods.
Journal ArticleDOI
A simple approach to the capacitance technique for determination of interface state density of a metal semiconductor contact
Santosh Pandey,S. Kal +1 more
TL;DR: In this article, the authors attempt to interpret the experimentally observed nonideal Al-pSi Schottky diode I-V and C-V characteristics, and derive expressions for the capacitance-voltage relationship at low frequency and high frequency.
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The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method
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Journal ArticleDOI
Molecular Passivation of Mercury−Silicon (p-type) Diode Junctions: Alkylation, Oxidation, and Alkylsilation
Yong-Jun Liu,Hua-Zhong Yu +1 more
TL;DR: In this paper, organic monolayers were grafted on both hydrogen-terminated and oxidized silicon (p-type) surface to evaluate the electrical performance of molecularly modified metal−semiconductor diode junctions.
Journal ArticleDOI
The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode
TL;DR: In this article, it was shown that the chitosan/n-Si contact exhibited clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature.
References
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Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI
Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
P. Chattopadhyay,B. RayChaudhuri +1 more
TL;DR: In this paper, the frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes were investigated by considering the series resistance effect, and the peak value of the capacitance was found to vary with series resistance, interface state density and the frequency of the a.c. signal.
Journal ArticleDOI
Interface-state measurements at Schottky contacts: A new admittance technique.
TL;DR: A new characterization method is presented for traps at the interfacial layer of Schottky contacts based on ac-admittance measurements and a new trap transistor model which quantitatively explains the measured ac behavior as well as the dc characteristics.
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