Proceedings ArticleDOI
Characterization of linewidth variation
Alfred K. K. Wong,Antoinette F. Molless,Timothy A. Brunner,Eric M. Coker,Robert H. Fair,George L. Mack,Scott M. Mansfield +6 more
- Vol. 4000, pp 184-191
TLDR
In this article, a three-step methodology is presented to identify the causes of line width variation with distinct spatial signatures by spatial analysis, and sources with similar spatial signatures are then separated by contributor-specific measurements.Abstract:
Characterization of line width variation by a three-step methodology is presented. Causes of line width variation with distinct spatial signatures are first isolated by spatial analysis. Sources with similar spatial signatures are then separated by contributor-specific measurements. Unanticipated components are lastly identified by examination of the residual from spatial analysis. Significant sources include photomask error, flare, aberrations, development non-uniformity, and scan direction asymmetry. These components are synthesized to quantify the contributions from the three modules of the patterning process: photomask, exposure system, and post-exposure processing. Although these modules are independent of one another their effects on line width variation may be correlated. Moreover, the relative contributions of the modules are found to vary with exposure tool, development track, and lithography strategy, affirming the usefulness of the methodology in process tracking and optimization.read more
Citations
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Improving resolution in photolithography with a phase-shifting mask
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Journal ArticleDOI
Linewidth variation characterization by spatial decomposition
Alfred K. K. Wong,Antoinette F. Molless,Timothy A. Brunner,Eric M. Coker,Robert H. Fair,George L. Mack,Scott M. Mansfield +6 more
TL;DR: In this paper, the contribution of photomask, exposure system, and post-exposure processing to linewidth variation has been investigated, and the most effective means to reducing the overall linwidth variation depends on the relative importance between these components.
References
More filters
Journal Article
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Journal ArticleDOI
Impact of lens aberrations on optical lithography
TL;DR: The impact of different types of aberrations on lithographic imagery through simulation is examined and new techniques for measuring aberration by examining lithographically printed resist patterns are considered.
Journal Article
Imaging characteristics of multi-phase-shifting and halftone phase-shifting masks
TL;DR: In this paper, phase-shifting masks and imaging characteristics are discussed and compared with those of conventional transmission masks and a halftone phase shifting mask is suggested for printing isolated patterns and it gives wider focus latitude than conventional mask technology.
Proceedings ArticleDOI
Subhalf-micron lithography system with phase-shifting effect
TL;DR: In this article, a new imaging technology for the 64M DRAM, named "CQUEST" (Canon Ql/adrupole Effect for Stepper Technology), is derived from the mathematical analysis of the partial coherence theory.
Journal Article
New phase shifting mask with self-aligned phase shifters for a quarter micron photolithography
TL;DR: In this paper, a self-aligned phase shifter was proposed to reduce the width of photo-intensity to 60% of that without phase shifters, while keeping high contrasts.