CMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide
TLDR
The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.Abstract:
We propose and analyze via simulation a novel approach to implement a complementary metal-oxide-semiconductor compatible and high extinction ratio transverse magnetic pass polarizer on the silicon-on-insulator platform with a 340 nm thick silicon core. The TM-pass polarizer utilizes a highly doped p-silicon waveguide as the transverse hybrid plasmonic waveguide. We observed an extinction ratio of 30.11 dB and an insertion loss of 3.08 dB for a device length of 15 µm. The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.read more
Citations
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Journal ArticleDOI
CMOS-compatible multi-band plasmonic TE-pass polarizer
Nicolas Abadia,Md. Ghulam Saber,Frank Bello,Alireza Samani,Eslam El-Fiky,Yun Wang,John F. Donegan,David V. Plant +7 more
TL;DR: A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed and it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.
Journal ArticleDOI
Ultracompact AZO-based TE-pass and TM-pass hybrid plasmonic polarizers
Ahmed El-Sayed Abd-Elkader,Mohamed Farhat O. Hameed,Nihal F. F. Areed,Hossam El-Din Mostafa,Salah S. A. Obayya +4 more
TL;DR: In this article, a hybrid plasmonic silicon-on-insulator platform for transverse electric (TE)-and transverse magnetic (TM)-pass polarizers was proposed and the numerical results showed that the TE-pass polarizer has 20.6dB extinction ratio and 0.21dB insertion loss at an operating wavelength of 1.55μm.
Journal ArticleDOI
TE/TM-pass polarizers based on lateral leakage in a thin film lithium niobate–silicon nitride hybrid platform
Yang Liu,Xingrui Huang,Zezheng Li,Yingxin Kuang,Huan Guan,Qingquan Wei,Zhongchao Fan,Zhiyong Li +7 more
TL;DR: TE/TM-pass polarizers based on the lithium niobate-silicon nitride hybrid platform are numerically proposed for the first time, to the best of the authors' knowledge by utilizing the lateral leakage of a shallowly etched rib waveguide.
Journal ArticleDOI
Demonstration of a 120° hybrid based simplified coherent receiver on SOI for high speed PON applications
Md. Ghulam Saber,Mohamed Osman,David Patel,Alireza Samani,Eslam El-Fiky,M. S. Alam,Kh Arif Shahriar,Zhenping Xing,Maxime Jacques,Boris Dortschy,Gemma Vall-Llosera,Patryk Urban,Fabio Cavaliere,Stephane Lessard,David V. Plant +14 more
TL;DR: The first simplified coherent receiver using a 120° hybrid on silicon-on-insulator (SOI) for high speed PON applications is demonstrated and 25 Gbit/s two-level pulse amplitude modulation (PAM-2) transmission over 30 km standard single mode fiber in the C-band is achieved without any digital signal processing (DSP) either at the transmitter or at the receiver.
Journal ArticleDOI
Optimization of silicon-photonic crystal (PhC) waveguide for a compact and high extinction ratio TM-pass polarization filter
Chandra Prakash,Mrinal K. Sen +1 more
TL;DR: In this article, a transverse-magnetic pass polarization filter has been proposed, which utilizes both the index guiding and bandgap property simultaneously to realize its operation as a polarizer.
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