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Open AccessJournal ArticleDOI

CMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide

Md. Ghulam Saber, +2 more
- 06 Aug 2018 - 
- Vol. 26, Iss: 16, pp 20878-20887
TLDR
The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.
Abstract
We propose and analyze via simulation a novel approach to implement a complementary metal-oxide-semiconductor compatible and high extinction ratio transverse magnetic pass polarizer on the silicon-on-insulator platform with a 340 nm thick silicon core. The TM-pass polarizer utilizes a highly doped p-silicon waveguide as the transverse hybrid plasmonic waveguide. We observed an extinction ratio of 30.11 dB and an insertion loss of 3.08 dB for a device length of 15 µm. The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.

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Citations
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Journal ArticleDOI

CMOS-compatible multi-band plasmonic TE-pass polarizer

TL;DR: A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed and it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.
Journal ArticleDOI

Ultracompact AZO-based TE-pass and TM-pass hybrid plasmonic polarizers

TL;DR: In this article, a hybrid plasmonic silicon-on-insulator platform for transverse electric (TE)-and transverse magnetic (TM)-pass polarizers was proposed and the numerical results showed that the TE-pass polarizer has 20.6dB extinction ratio and 0.21dB insertion loss at an operating wavelength of 1.55μm.
Journal ArticleDOI

TE/TM-pass polarizers based on lateral leakage in a thin film lithium niobate–silicon nitride hybrid platform

TL;DR: TE/TM-pass polarizers based on the lithium niobate-silicon nitride hybrid platform are numerically proposed for the first time, to the best of the authors' knowledge by utilizing the lateral leakage of a shallowly etched rib waveguide.
Journal ArticleDOI

Demonstration of a 120° hybrid based simplified coherent receiver on SOI for high speed PON applications

TL;DR: The first simplified coherent receiver using a 120° hybrid on silicon-on-insulator (SOI) for high speed PON applications is demonstrated and 25 Gbit/s two-level pulse amplitude modulation (PAM-2) transmission over 30 km standard single mode fiber in the C-band is achieved without any digital signal processing (DSP) either at the transmitter or at the receiver.
Journal ArticleDOI

Optimization of silicon-photonic crystal (PhC) waveguide for a compact and high extinction ratio TM-pass polarization filter

TL;DR: In this article, a transverse-magnetic pass polarization filter has been proposed, which utilizes both the index guiding and bandgap property simultaneously to realize its operation as a polarizer.
References
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Journal ArticleDOI

Electrooptical effects in silicon

TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI

Alternative Plasmonic Materials: Beyond Gold and Silver

TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
Journal ArticleDOI

Polarization-transparent microphotonic devices in the strong confinement limit

TL;DR: In this article, the first polarization-transparent add-drop filter from polarization-sensitive microring resonators is presented, which shows almost complete elimination of polarization sensitivity over the 60nm bandwidth measured, while maintaining outstanding filter performance.
Journal ArticleDOI

Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G

TL;DR: It is shown that the new emerging large-volume markets loosely defined as Computercom will demand new standards and new technologies, and how the balance between single-channel bit rate, and number of wavelengthmultiplexed and spatially multiplexed optical channels can help to satisfy the need for huge total bandwidth, while keeping cost low and power efficiency high.
Journal ArticleDOI

Subnanometer Linewidth Uniformity in Silicon Nanophotonic Waveguide Devices Using CMOS Fabrication Technology

TL;DR: In this paper, the authors report sub-nanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-volume CMOS fabrication tools, using wavelength-selective devices such as ring resonators, Mach-Zehnder interferometers, and arrayed waveguide gratings to assess the device nonuniformity within and between chips.
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