Proceedings ArticleDOI
Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs
Lars W. Liebmann,Thomas Harold Newman,Richard A. Ferguson,Ronald M. Martino,Antoinette F. Molless,Mark O. Neisser,J. Tracy Weed +6 more
- Vol. 2197, pp 612-623
TLDR
In this article, a comparative analysis of binary 'chrome-on-glass', attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime is presented.Abstract:
This paper presents a comparative analysis of binary `chrome-on-glass,' attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime. Lithography techniques are compared based on design complexity, ground rule impact, process latitude, and cost. Data are presented from aerial image simulations (SPLAT), aerial image measurements (AIMSR), and SEM measurements. Phase edge shifted designs clearly exhibit the largest process window for 200 nm linewidths exposed on a 0.5 NA 248 nm DUV stepper. The complexity of the mask engineering (design as well as manufacture) and exposure process for this `hard' phase shifting technique warrants the study of less powerful but also less restrictive phase shifting options. This paper investigates the tradeoffs associated with various applicable phase shift mask (PSM) techniques and presents recommendations based on specific program requirements.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.read more
Citations
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Journal Article
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Journal ArticleDOI
Limitations and challenges of computer-aided design technology for CMOS VLSI
R.E. Bryant,Kwang-Ting Cheng,Andrew B. Kahng,Kurt Keutzer,W. Maly,Richard Newton,Larry Pileggi,Jan M. Rabaey,Alberto Sangiovanni-Vincentelli +8 more
TL;DR: Limits to how design technology can enable the implementation of single-chip microelectronic systems that take full advantage of manufacturing technology with respect to such criteria as layout density performance, and power dissipation are explored.
Proceedings ArticleDOI
Subwavelength lithography and its potential impact on design and EDA
Andrew B. Kahng,Y. C. Pati +1 more
TL;DR: This tutorial paper surveys the potential implications of subwavelength optical lithography for new tools and flows in the interface between layout design and manufacturability and addresses the necessary changes in the design-to-manufacturing flow.
Journal ArticleDOI
Development and application of a new tool for lithographic mask evaluation, the stepper equivalent Aerial Image Measurement System, AIMS
Russell A. Budd,Derek B. Dove,John L. Staples,Ronald M. Martino,Richard A. Ferguson,J. Tracy Weed +5 more
Patent
Method and apparatus for determining phase shifts and trim masks for an integrated circuit
TL;DR: In this paper, a method and apparatus for deep sub-micron layout optimization is described, where a first mask (e.g., a phase shift mask) is generated that includes the component to be manufactured using the phase shifting process.
References
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Journal Article
Improving resolution in photolithography with a phase-shifting mask
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Proceedings ArticleDOI
Gradient Phase-Shifter Transitions Fabricated by Ion Milling
TL;DR: In this paper, phase shifter transitions with a moderate variation of the transmitted light were fabricated using ion milling and a progressing shadow and a corresponding variation in etch depth along the transition was achieved by changing the tilt angle of the sample during the process.