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Copper-alloyed ZnS as a p-type transparent conducting material

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TLDR
Copper alloyed ZnS was investigated as a p-type, transparentconducting material composed of earth-abundant elements as mentioned in this paper, and the results showed that transparency and conductivity were comparable to some of the best reported P-type materialswithour bestfilmsexhibitingconductivitiesof54Scm.
Abstract
, Phone: þ011 1 510 486 6715, Fax: þ011 510 486 4995Copper alloyed ZnS was investigated as a p-type, transparentconducting material composed of earth-abundant elements.Thin films of Cu-alloyed ZnS were synthesized using pulsedlaserdepositionwithCucontentsintherangeofx¼0.06–0.27(Cu content x is reported as the fraction of cation present).Thermopower and Hall effect measurements show that thefilms are p-type. We find that transparency and conductivityare comparable to some of the best reported p-type materialswithourbestfilmsexhibitingconductivitiesof54Scm

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Nanostructured electrochromic smart windows: traditional materials and NIR-selective plasmonic nanocrystals

TL;DR: In an effort to demonstrate a new type of electro Chromic device that goes beyond the capabilities of commonly used electrochromic materials, researchers have turned to plasmonic transparent conductive oxide (TCO) nanocrystals.
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Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells

TL;DR: Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact and an open circuit voltage of 535 mV was observed, which compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact.
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Influence of defects and dopants on the photovoltaic performance of Bi2S3: first-principles insights

TL;DR: In this paper, the authors showed that the photovoltaic efficiency of Bi2S3 solar cells is limited by its intrinsic point defects, i.e., both S vacancy and S interstitial can have high concentration and produce deep defect levels in the bandgap, leading to non-radiative recombination of electron-hole carriers and reduced minority carrier lifetime.
Journal ArticleDOI

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

TL;DR: In this article, the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review.
Journal ArticleDOI

Oxide bipolar electronics: materials, devices and circuits

TL;DR: The history of bipolar oxide thin film devices can be found in this article, where a wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes.
References
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Journal ArticleDOI

Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides

TL;DR: The effective ionic radii of Shannon & Prewitt [Acta Cryst. (1969), B25, 925-945] are revised to include more unusual oxidation states and coordinations as mentioned in this paper.
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Roll-to-roll production of 30-inch graphene films for transparent electrodes

TL;DR: The roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates are reported, showing high quality and sheet resistances superior to commercial transparent electrodes such as indium tin oxides.
Journal ArticleDOI

P-type electrical conduction in transparent thin films of CuAlO2

TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI

Solution-processed metal nanowire mesh transparent electrodes.

TL;DR: In this article, the authors demonstrate solution-processed transparent electrodes consisting of random meshes of metal nanowires that exhibit an optical transparency equivalent to or better than that of metal-oxide thin films for the same sheet resistance.
Journal ArticleDOI

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO

TL;DR: In this paper, the authors study the intrinsic defect physics of ZnO and find that ZnOs cannot be doped p type via native defects, despite the fact that they are shallow donors.
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