Journal ArticleDOI
Correlation between inversion layer mobility and surface roughness measured by AFM
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TLDR
In this paper, the correlation between inversion layer mobility of MOSFET's and surface micro-roughness of the channel has been studied using split CV measurements and AFM analysis.Abstract:
The correlation between inversion layer mobility of MOSFET's and surface micro-roughness of the channel has been studied using split CV measurements and AFM analysis. The mobility at high normal field decreases with increasing the surface roughness over a wide range of roughness from 0.3 nm to 4.3 nm (RMS). The trend is the same even for very thin gate oxides down to 3 nm. Careful AFM measurements are used to show that the gate oxide thickness doesn't affect the surface roughness, supporting the independence of mobility on the gate oxide thickness.read more
Citations
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Journal ArticleDOI
Analyzing atomic force microscopy images using spectral methods
TL;DR: In this paper, the authors compare the definitions of power spectral density (PSD) commonly used by various authors and demonstrate the advantages of spectral methods on atomic force microscopic (AFM) image analysis.
Journal ArticleDOI
Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes
Hsing-Hung Hsieh,Chung-Chih Wu +1 more
TL;DR: In this article, a top-gate and bottom-gate amorphous ZnO TFTs of micrometer scales were implemented using fully lithographic and etching processes, achieving rather high field effect mobilities of 25 and 4cm2∕Vs and on-off current ratios of >107 and >106, respectively.
Journal ArticleDOI
Surface Roughness Measurements Using Power Spectrum Density Analysis with Enhanced Spatial Correlation Length
TL;DR: In this article, the lateral and vertical roughness of a surface as determined by an atomic force microscope (AFM) is expressed using conventional statistical measurements including root-mean-square, peak-to-valley ratio, and average roughness.
Journal ArticleDOI
High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates
Chih-Wei Chien,Cheng-Han Wu,Yu-Tang Tsai,Yen-Cheng Kung,Chang-Yu Lin,Po-Ching Hsu,Hsing-Hung Hsieh,Chung-Chih Wu,Yung-Hui Yeh,Chyi-Ming Leu,Tzong-Ming Lee +10 more
TL;DR: In this paper, flexible amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were demonstrated on fully transparent and high-temperature polyimide-based nanocomposite substrates.
Journal ArticleDOI
On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs
TL;DR: A quantitative analysis of the Si/SiO/sub 2/interface roughness based on atomic force microscope (AFM) and mobility measurements is presented in this article, which shows that the spatial components of the roughness affecting the carrier transport lie outside the range probed by AFM, thus making questionable the validity of previously published correlations between AFM measurements and carrier mobility.
References
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Journal ArticleDOI
Charge accumulation and mobility in thin dielectric MOS transistors
TL;DR: In this paper, the turn-on of very thin dielectric MOS devices from subthreshold to strong inversion was studied and a functional form has been found for the derivative of channel charge with respect to gate voltage.
Proceedings ArticleDOI
Characterization of the electron mobility in the inverted l100g Si surface
A.G. Sabnis,J.T. Clemens +1 more
TL;DR: In this article, the effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate voltages, and back-bias voltages.
Journal ArticleDOI
Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness
TL;DR: In this article, the effect of the Si-SiO/sub 2/ interface microroughness on the electron channel mobility of n-MOSFETs was investigated.
Journal ArticleDOI
On the role of scattering by surface roughness in silicon inversion layers
Y.C. Cheng,E.A. Sullivan +1 more
TL;DR: In this paper, the authors show that scattering of carriers by surface roughness may be important in the silicon inversion layer of metal-oxide-semiconductor structures, which is a direct result of the fluctuating potential caused by the imperfect interface which is only a small distance from the inversion carriers.
Proceedings ArticleDOI
On the universality of inversion-layer mobility in n- and p-channel MOSFETs
TL;DR: In this paper, the inversion-layer mobility in n- and p-channel MOSFETs with 10/sup 15/ to 10 /sup 18/ cm/sup -3/ substrate impurity concentrations was examined.