Journal ArticleDOI
Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor-Based Biosensor
TLDR
In this article, an underlap structure of tunneling field effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit (59 mV/pH) of sensitivity.Abstract:
In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit (59 mV/pH) of sensitivity. After incorporating the electrolyte medium in TFET, effect of pH variation on device characteristics such as drain current vs front gate voltage, voltage sensitivity, and current sensitivity are investigated. The interface charge density at the oxide-silicon interface of TFET is obtained as a function of electrolyte pH from physics-based modelling. Voltage sensitivity value ~180 mV/pH that is greater than three times of Nernst limit of 59 mV/pH and current sensitivity value that is more than one decade per pH are observed for TFET based sensor. In order to validate the results, models used in TFET are well-calibrated with experimental data and the result of TFET are compared with inversion mode (IM) device. Results show that TFET gives superior performance than IM device; hence an underlap TFET can be a promising alternative for the next generation biosensor.read more
Citations
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Journal ArticleDOI
A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor
TL;DR: In this paper, a simulation approach of transient analysis on single cavity dielectric-modulated (DM) ${p}$ -type of tunnel field effect transistor (TFET) is examined for biosensing applications.
Journal ArticleDOI
AlGaN/GaN HEMT pH Sensor Simulation Model and Its Maximum Transconductance Considerations for Improved Sensitivity
TL;DR: In this paper, the pH of solution is modelled by incorporating charged adsorbates as interface charge density at oxide-semiconductor interface in HEMT for the first time to best of the knowledge.
Journal ArticleDOI
GaN HEMT based biosensor for the detection of breast cancer marker (C-erbB2)
Nidhi Chaturvedi,Nidhi Chaturvedi,Rajdeep Chowdhury,Shivanshu Mishra,Shivanshu Mishra,Kuldip Singh,Nitin Chaturvedi,Ashok Chauhan,Surojit Pande,Niketa Sharma,Priyavart Parjapat,Ramakant Sharma,Prateek Kothari,Arvind K. Singh +13 more
TL;DR: The development of a compact GaN high-electron-mobility transistor (HEMT) based biosensor for an easy and early detection of breast cancer biomarker C-erbB2 in the human cell line is reported on.
Journal ArticleDOI
Dielectric modulated GaAs 1- x Sb X FinFET as a label-free biosensor: device proposal and investigation
Journal ArticleDOI
Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results
TL;DR: Open-gate junction gate field effect transistor (OG-JFET) as discussed by the authors is a new field effect sensor for biosensing applications, which consists of a p-type channel on top of an n-type layer, which serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes.
References
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Adrian M. Ionescu,Heike Riel +1 more
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Journal ArticleDOI
A general model to describe the electrostatic potential at electrolyte oxide interfaces
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Journal ArticleDOI
Nernst limit in dual-gated Si-nanowire FET sensors.
Oren Knopfmacher,Alexey Tarasov,Wangyang Fu,Mathias Wipf,Bjoern Niesen,Michel Calame,Christian Schönenberger +6 more
TL;DR: It is demonstrated that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature.