Proceedings ArticleDOI
Effect of gate engineering in FinFET for RF applications
K. Sivasankaran,T.R.K Kumar Chitroju,K. Sai Anurag Reddy,M. Sai Subrahmanyam,M. Viswanath Sri Harsha,P.S. Mallik +5 more
- pp 1-6
TLDR
In this article, the authors presented the RF performance of gate-engineered FinFETs and analyzed the capability of single material gate (SMG), dual-material gate (DMG), and triple material gate gate (TMG) for RF performance characteristics.Abstract:
This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate engineering is process of implementing different materials with different work functions on gate of device, and studying its impact on device operation. We have analyzed the capability of Single Material Gate (SMG), Dual Material Gate (DMG) and Triple Material Gate (TMG) gate FinFET for RF performance characteristics. We have used 3-D device simulation to extract the RF figure of merits such as transconductance generation factor (g m /I d ), cut-off frequency (f t ) and maximum oscillation frequency (f max ). The effect of different gate length ratios has also been reported. The result shows that TMG-FinFET exhibit superior RF performance as compared to SMG and DMG- FinFET.read more
Citations
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Journal ArticleDOI
Influence of gate and channel engineering on multigate MOSFETs-A review
TL;DR: The effect of gate and channel engineering on the characteristics (both D.c. and a.c)) of multigate MOSFETs have been investigated and presented and recent developments in gate & channel engineering is included.
Journal ArticleDOI
Design and Optimization of Novel Shaped FinFET
TL;DR: In this article, a novel highperformance and miniaturized fin-shaped field effect transistor has been proposed which has been named as rectzoidal (rectz) because of its origin from the existing rectangular (rect) and trapezoidal (trap) structures.
Journal ArticleDOI
Impact & Analysis of Inverted-T shaped Fin on the Performance parameters of 14-nm heterojunction FinFET
Proceedings ArticleDOI
A review of nanoscaled bulk double gate and triple gate FETs for low standby power application
Ajit Kumar,J. N. Roy +1 more
TL;DR: In this article, the electrical characteristics of bulk double gate (DG) and triple gate (TG) FETs for low standby power application are reviewed using various peer reviewed literature.
Proceedings ArticleDOI
Impact of Interface Trap Charge on Analog/RF parameters of Novel Heterogeneous Gate Dielectric Tri-Metal Gate FinFET
TL;DR: In this paper, an innovative structure is introduced to optimize TMG FinFET by employing dielectric material engineering, where HfO 2 is placed towards the source side, with SiO 2 towards the drain to enhance the I ON and simultaneously suppress I OFF for the proposed device.
References
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Proceedings ArticleDOI
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Influence of Channel and Gate Engineering on the Analog and RF Performance of DG MOSFETs
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Effect of gate engineering in double-gate MOSFETs for analog/RF applications
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