Journal ArticleDOI
Influence of gate and channel engineering on multigate MOSFETs-A review
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TLDR
The effect of gate and channel engineering on the characteristics (both D.c. and a.c)) of multigate MOSFETs have been investigated and presented and recent developments in gate & channel engineering is included.About:
This article is published in Microelectronics Journal.The article was published on 2017-08-01. It has received 16 citations till now. The article focuses on the topics: Transconductance.read more
Citations
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Journal ArticleDOI
Realization with fabrication of double-gate MOSFET based differential amplifier
TL;DR: A differential amplifier with Double-Gate (DG) MOSFET which can be used in electronic devices at Micro- and Nano-technology level is designed and tested for various parameters such as differential mode gain, commonmode gain, Common Mode Rejection Ratio (CMRR), and frequency response.
Journal ArticleDOI
Study of analog performance of common source amplifier using rectangular core-shell based double gate junctionless transistor
Vishal Narula,Mohit Agarwal +1 more
Journal ArticleDOI
A design of nanoscale double-gate FET based ring oscillator with improved oscillation frequency using device engineering
TL;DR: In this article, the performance of inverter and ring oscillator circuits based on the nanoscale double-gate (DG) FET is improved by using device engineering approaches, such as on-current and the total gate capacitance.
Journal ArticleDOI
Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective
TL;DR: In this article, the authors investigate a detailed comparative analysis of leakage currents present with or without short channel effects in MOS devices including junctionless transistor and compare them with the ON-state current.
Journal ArticleDOI
InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model
TL;DR: In this article, a double-gate dual-metal tunnel field effect transistor (DG-TFET) with graphene nano-ribbon is presented, which improves the performance by incorporating group III-V material in source.
References
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Proceedings ArticleDOI
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
TL;DR: In this paper, a Double-Gate, Strained-Ge, Heterostructure Tunneling FET (TFET) exhibiting very high drive currents and SS < 60 mV/dec was experimentally demonstrated.
Journal ArticleDOI
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
TL;DR: In this paper, a dual material gate (DMG) was applied to a tunnel field effect transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage.
Journal ArticleDOI
Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor
Sneh Saurabh,M. Jagadesh Kumar +1 more
TL;DR: In this article, a dual material gate (DMG) was applied to a tunnel field effect transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average sub-threshold slope.
Journal ArticleDOI
A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation
TL;DR: In this article, the authors presented the unique features exhibited by a modified asymmetrical double-gate (DG) silicon-on-insulator (SOI) MOSFET.
Posted Content
A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET - Two-dimensional Analytical Modeling and Simulation
TL;DR: In this paper, the authors presented the unique features exhibited by modified asymmetrical double gate (DG) silicon on insulator (SOI) MOSFET, which exhibits significantly reduced short channel effects.