Journal ArticleDOI
Effects of interface state density on 4H-SiC n-channel field-effect mobility
Reads0
Chats0
TLDR
In this article, the effects of D IT at the interface between SiO2 and Si-, C-, and a-face 4H-SiC in n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated.Abstract:
We investigated the effects of D IT at the interface between SiO2 and Si-, C-, and a-face 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. D IT at E C − E T = 0.2 eV was evaluated by the C − ψ S method using MOS capacitors and was accurately reflected in the subthreshold slope of the MOSFETs. The peak field-effect mobility was inversely proportional to D IT. The mobility for the a-face MOSFETs was 1.5 times or more higher than the other faces mobilities, indicating that mobility limiting factors other than D IT(0.2 eV) may exist for the Si- and C-face interfaces.read more
Citations
More filters
Journal ArticleDOI
Material science and device physics in SiC technology for high-voltage power devices
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Journal ArticleDOI
Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors
Xuming Zou,Jingli Wang,Chung Hua Chiu,Yun Wu,Xiangheng Xiao,Changzhong Jiang,Wen-Wei Wu,Liqiang Mai,Tangsheng Chen,Jinchai Li,Johnny C. Ho,Lei Liao +11 more
TL;DR: Interface or dielectric engineering is an important step towards the practical implementation of MoS2 devices with the optimized performance in the back- or dual-gated geometry.
Journal ArticleDOI
Silicon carbide: A unique platform for metal-oxide-semiconductor physics
Gang Liu,Blair Tuttle,Sarit Dhar +2 more
TL;DR: In this paper, the authors reviewed the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport in 4H-SiC power metal oxide Semiconductor Field Effect Transistors.
Journal ArticleDOI
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
TL;DR: In this article, the authors investigated the effects of the interface state density (D IT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes.
Proceedings ArticleDOI
Understanding and reduction of degradation phenomena in SiC power devices
Tsunenobu Kimoto,Akifumi Iijima,Hidekazu Tsuchida,Tetsuya Miyazawa,Takeshi Tawara,Akihiro Otsuki,Tomohisa Kato,Yoshiyuki Yonezawa +7 more
Abstract: Impacts of extended defects on performance and reliability of SiC power devices are reviewed Threading dislocations in the state-of-the-art SiC wafers do not work as the major leakage paths and macroscopic defects generated during epitaxial process are more harmful A basal plane dislocation is a killing defect in SiC bipolar devices because a Shockley-type stacking fault (SSF) is expanded from the dislocation when the electron-hole recombination energy is given After classification of SSF-expansion patterns, the major types of SSFs (triangular-shaped and bar-shaped SSFs) and their origins are identified Based on these understandings, two approaches to eliminate the “bipolar degradation” in SiC devices are presented In particular, it is demonstrated that a “recombination-enhancing layer” is effective for substantial reduction of bipolar degradation in SiC devices
References
More filters
Journal ArticleDOI
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung,Chin-Che Tin,John R. Williams,K. McDonald,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Leonard C. Feldman,O. W. Holland,M.K. Das,John W. Palmour +10 more
TL;DR: In this article, the authors demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide.
Journal ArticleDOI
Status and prospects for SiC power MOSFETs
TL;DR: In this article, the authors review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.
Journal ArticleDOI
Interfacial characteristics of n2o and no nitrided sio2 grown on sic by rapid thermal processing
TL;DR: In this paper, the interfacial characteristics of Al/SiO2/n-type 6H-SiC capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated.
Journal ArticleDOI
Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
TL;DR: In this article, a new technique for fabricating 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) with high inversion channel mobility was proposed.
Journal ArticleDOI
Advances in SiC MOS Technology
TL;DR: In this article, the authors summarize the present status of this field, including MOS analysis techniques, oxidation procedures, experimental results, reliability considerations, alternative insulators, and remaining questions, and conclude that great care must be exercised in interpreting MOS data on wide bandgap semiconductors.