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Electric-field control of magnetic domain wall motion and local magnetization reversal

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TLDR
An approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures with negligible magnetocrystalline anisotropy is reported on.
Abstract
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.

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Journal ArticleDOI

The evolution of multiferroics

TL;DR: In this article, a review of multiferroic thin-film heterostructures, device architectures, and domain and interface effects is presented. But the focus of the field is now shifting into neighbouring research areas, as discussed in this review.
Journal Article

Electric-field control of magnetic order above room temperature

TL;DR: Ferroelectricity in BaTiO3 crystals is used to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature, correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude.
Journal ArticleDOI

Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials.

TL;DR: The most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures are summarized, and perspectives on some key issues that require further study are presented in order to realize their practical device applications.
Journal ArticleDOI

Magnetoelectric Devices for Spintronics

TL;DR: The control of magnetism by electric fields is an important goal for the future development of low-power spintronics as discussed by the authors, and various approaches have been proposed on the basis of either single-phase multiferroic materials or hybrid structures in which a ferromagnet is influenced by the electric field applied to an adjacent insulator.
References
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Journal ArticleDOI

Multiferroic and magnetoelectric materials

TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
Journal ArticleDOI

Magnetic Domain-Wall Racetrack Memory

TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Journal ArticleDOI

Multiferroics: progress and prospects in thin films.

TL;DR: Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
Journal ArticleDOI

The emergence of spin electronics in data storage

TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Journal ArticleDOI

Magnetic Domain-Wall Logic

TL;DR: “Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics.
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