Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
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Citations
Homoepitaxial graphene tunnel barriers for spin transport
Adsorption performance of modified graphene toward Ti: a first-principles investigation.
Tunable ferroelectricity in hBN intercalated twisted double-layer graphene
Recent advances in the mechanics of 2D materials
Strong Localization Effects in the Photoluminescence of Transition Metal Dichalcogenide Heterobilayers
References
The rise of graphene
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
Two-dimensional atomic crystals
Van der Waals heterostructures
Related Papers (5)
Frequently Asked Questions (12)
Q2. Why do the authors use them in testing different substrates?
Because capacitors are quicker and easier to fabricate and examine, the authors tend to employ themmore than Hall bars in testing various substrates, only checking their conclusions by transportmeasurements if necessary.
Q3. What is the process of encapsulating graphene onto a selected crystal?
After the transfer of graphene onto a selected crystal,the structure is immediately encapsulated with another hBN crystal (5-20 nm thick) using thesame dry-peel transfer.
Q4. How can the authors use semiconducting crystals as substrates?
1-8 Nonetheless, it is possible to use semiconducting crystals assubstrates if the gate voltage Vg is applied through a top dielectric layer.
Q5. What is the onset of the oscillations in graphene?
In this particular device, the onset of magneto-oscillations isobserved at 1 T, which implies µq ~10,000 cm2 V-1 s-1, a factor of 2 lower than µq in MoS2/graphene/hBN in Fig.
Q6. What is the way to assess graphene?
In conclusion, using transport and magnetocapacitance measurements, the authors have assessedelectronic quality of single-layer graphene devices fabricated on various atomically flatsubstrates.
Q7. How many cm2 V-1 s-1 is the onset of magneto-os?
Weak Shubnikov – de Hass oscillations could be observed in B >10 T (Fig. 4c), which allows an estimate for µq as 1,000 cm2 V-1 s-1.
Q8. How many gate voltages were applied to a particular device?
The range of gate voltages, Vg, applied to a particular device was dictated by dielectric strength of the hBN layer limited by typically 0.5 V/nm 2, 3.
Q9. How can the authors achieve a of 100,000 cm2 V-1 s-1?
In the latter case, the authors can usually achieve µ of 100,000 cm2 V-1 s-1 7, 12 and, with using the ‘dry-peel’ transfer,12 µ can go up to 500,000 cm2 V-1 s-1, allowing ballistic devices with scattering occurring mainly at sample boundaries.
Q10. What is the method for ohmic contacts?
The latter method allows ohmic contacts with resistivity of 1 kOhm/µm over awide range of charge carrier densities n and magnetic fields B, similar to traditional (topevaporated) contacts.5-11
Q11. What is the DoS minimum for graphene on mica?
Despite such strong scattering, graphene on mica is practically undoped (the DoS minimum is near zero Vg; n 1011 cm-2), which is surprising and disagrees with the earlier Raman studies that inferred heavy p-dopingfor graphene on muscovite mica (1013 cm-2).15 Similarly low µ are observed forBSCCO/graphene/hBN in both transport and capacitance measurements (µq µFE 1,000 cm2 V-1 s-1).
Q12. How much V-1 s-1 is graphene on SiO24?
In this case, the authors find µq 2,500 cm2 V-1 s-1, similar to graphene on SiO24 and notably higher than the values obtained using atomically flat oxides.