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Open AccessJournal ArticleDOI

Energy band-gap engineering of graphene nanoribbons.

Melinda Y. Han, +3 more
- 16 May 2007 - 
- Vol. 98, Iss: 20, pp 206805-206805
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TLDR
It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Abstract
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

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Citations
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σ- and π-Defects at Graphene Nanoribbon Edges: Building Spin Filters

TL;DR: Using an approach based on density functional theory and nonequilibrium Green's function formalism to calculate the transmittance, defects in monohydrogenated zigzag graphene nanoribbons are classified depending on their distinct transport properties.
BookDOI

Physics of graphene

TL;DR: Experimental Manifestation of Berry Phase and Probing Dirac Fermions in Graphene by Scanning Tunneling Microscopy and Spectroscopy as discussed by the authors, the Competition between Interactions and Disorder.
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Few Layer HfS2 FET

TL;DR: In this paper, a few layer HfS2 FET with robust current saturation and high current on/off ratio of more than 10^4 was presented, where the authors focused on its potential for well-balanced mobility and bandgap properties.
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Sub-10nm patterning by focused He-ion beam milling for fabrication of downscaled graphene nano devices

TL;DR: In this article, a hybrid fabrication method for graphene quantum dot devices with minimum feature sizes of 3nm and high yield is described, which is a combination of e-beam lithography and direct milling with the sub-nm focused helium ion beam generated by a helium ion microscope.
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Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance

TL;DR: The nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs) are reported on, which is directly related to the MoS (2) dielectric constant.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Journal ArticleDOI

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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