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Open AccessJournal ArticleDOI

Energy band-gap engineering of graphene nanoribbons.

Melinda Y. Han, +3 more
- 16 May 2007 - 
- Vol. 98, Iss: 20, pp 206805-206805
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TLDR
It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Abstract
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

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Citations
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Observation of anomalous phonon softening in bilayer graphene.

TL;DR: The observation in bilayer graphene of an unusual phonon softening that provides the first experimental proof for another type of phonon anomaly is reported, which is a logarithmic singularity in the phonon group velocity.
Journal ArticleDOI

Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

TL;DR: In this article, an atomistic 3D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field effect transistors and transistors with doped reservoirs (MOSFETs) was presented.
Journal ArticleDOI

Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

TL;DR: The metal-catalyzed etching contact treatment is compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and holds great promise to meet the contact performance required for the integration of graphene in future integrated circuits.
Journal ArticleDOI

Impact of Size Effect on Graphene Nanoribbon Transport

TL;DR: In this paper, the impact of edge scattering on carrier transport in GNRs has been investigated, and it is shown that carrier mobility is limited by edge scattering in patterned GNRs, where the ribbon width is less than 20 nm.
Journal ArticleDOI

Density functional theory calculations and molecular dynamics simulations of the adsorption of biomolecules on graphene surfaces.

TL;DR: The van der Waals interaction between the l-leucine and the graphene play a dominant role in the adsorption process under a certain range of temperature and pressure, and the l/graphene molecule could be adsorbed onto graphene spontaneously in aqueous solution.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Journal ArticleDOI

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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