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Open AccessJournal ArticleDOI

Energy band-gap engineering of graphene nanoribbons.

Melinda Y. Han, +3 more
- 16 May 2007 - 
- Vol. 98, Iss: 20, pp 206805-206805
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TLDR
It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Abstract
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

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Citations
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Local current mapping and patterning of reduced graphene oxide.

TL;DR: Conductive atomic force microscopy has been used to correlate the detailed structural and electrical characteristics of graphene derived from graphene oxide and it is shown that a local AFM-tip-induced electrochemical reduction process can be used to pattern conductive pathways on otherwise-insulating graphene oxide.
Journal ArticleDOI

Switching, Dual Spin-Filtering Effects, and Negative Differential Resistance in a Carbon-Based Molecular Device

TL;DR: In this article, the authors present ab initio calculations for spin-dependent electron transport in a molecular device constructed by two carbon chains capped with a phenyl ring, which is sandwiched between two zig-zag-edged graphene nanoribbon (ZGNR) electrodes, where the ZGNRs are modulated by external magnetic field.
Journal ArticleDOI

Engineering the electronic structure of graphene

TL;DR: The major progresses made in electronic structure engineering of graphene are reviewed, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain.
Journal ArticleDOI

Symmetry breaking induced bandgap in epitaxial graphene layers on SiC.

TL;DR: By introducing a finite density of Stone-Wales defects in the graphene layer(s), it is found that a bandgap is opened and decreases as the thickness of graphene layers increases, in good agreement with experiments.
Journal ArticleDOI

Nanoscale lithography on monolayer graphene using hydrogenation and oxidation.

TL;DR: In this paper, the authors proposed a method for the realization of next-generation electronic devices based on the transport properties of monolayer graphene, which is one of the most interesting materials applicable to next generation electronic devices due to its transport properties.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Journal ArticleDOI

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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