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Open AccessJournal ArticleDOI

Energy band-gap engineering of graphene nanoribbons.

Melinda Y. Han, +3 more
- 16 May 2007 - 
- Vol. 98, Iss: 20, pp 206805-206805
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TLDR
It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
Abstract
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

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Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications

TL;DR: While the primary focus of this review is on the science framework of SWCNT growth, connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene are drawn.
Journal ArticleDOI

Energy gaps and stark effect in boron nitride nanoribbons.

TL;DR: In this article, a first-principles investigation of the electronic properties of boron nitride nanoribbons (BNNRs) having either armchair or zigzag shaped edges passivated by hydrogen with widths up to 10 nm is presented.
Journal ArticleDOI

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Han Liu, +1 more
TL;DR: In this paper, the authors demonstrate atomic layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectrics.
Journal ArticleDOI

Simulation of Graphene Nanoribbon Field-Effect Transistors

TL;DR: In this paper, an atomistic 3D simulation of graphene nanoribbon field effect transistors (GNR-FETs) is presented, based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight binding Hamiltonian.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Journal ArticleDOI

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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