Journal ArticleDOI
Enhanced Carrier Density in a MoS 2 /Si Heterojunction-Based Photodetector by Inverse Auger Process
TLDR
In this article, the authors have demonstrated an ultrasensitive photodetector based on MoS2/Si (for both p-type and n-type Si) van der Walls (vdW) heterojunction, which provides a high photoresponsivity of greater than 103 A/W along with a large detectivity of ≈ 1012 Jones.Abstract:
When exploring the charge transport in the MoS2/Si heterojunction, it is imperative to understand the contribution of different carrier interactions and scattering mechanisms in the conduction process. Here, we have demonstrated an ultrasensitive photodetector based on MoS2/Si (for both p-type and n-type Si) van der Walls (vdW) heterojunction, which provides a high photoresponsivity of greater than 103 A/W along with a large detectivity of ≈ 1012 Jones (Jones = $\text{cm} \cdot \text{Hz}^{ {1/2}} \cdot \text{W}^{-1}$ ). This high photoresponsivity is attributed to the high absorption rate of incident photons and large current carrying capacity of a few layer MoS2. The tuning of barrier height at the MoS2/n-Si interface with photoexcitation of different wavelengths was interpreted by using Bardeen’s model. The increase in carrier density due to the photon energy results in a reduction of barrier height at the heterojunction. Because of increase in carrier density with wavelength, it was observed that the inverse Auger process prevails at higher wavelength for the relaxation of photoinduced charge carriers at the MoS2/Si interface over other scattering mechanisms. Our obtained results unveil the great potential of the MoS2/Si vdW heterojunction that may pave the way for new generation photodetectors.read more
Citations
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Journal ArticleDOI
Recent advances in ultrathin 2D hexagonal boron nitride based gas sensors
Neeraj Goel,Mahesh Kumar +1 more
TL;DR: The recent advances in the field of 2D hexagonal boron nitride (hBN) for realizing electronic and optoelectronic devices, including wearable and portable devices, have aroused scientific interest in this ultrathin material for a wide range of applications as mentioned in this paper.
Journal ArticleDOI
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
Adarsh Nigam,Neeraj Goel,Thirumaleshwara N. Bhat,Md. Tawabur Rahman,Surani Bin Dolmanan,Qiquan Qiao,Sukant K. Tripathy,Mahesh Kumar +7 more
TL;DR: In this paper, a sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT).
Journal ArticleDOI
Pd-decorated 2D SnSe ultrathin film on SiO2/Si for room-temperature hydrogen detection with ultrahigh response
Hanyang Xu,Yunjie Liu,Hui Liu,Shichang Dong,Yupeng Wu,Zegao Wang,Yimeng Wang,Mingsa Wu,Zhide Han,Lanzhong Hao +9 more
TL;DR: In this article, two-dimensional (2D) layered tin monoselenide (SnSe) ultrathin films are deposited on SiO2-buffered silicon substrates via a scalable sputtering method.
Journal ArticleDOI
Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector.
Jinrong Yao,Fangfang Chen,Juanjuan Li,Junli Du,Di Wu,Yongtao Tian,Cheng Zhang,Xinjian Li,Pei Lin +8 more
TL;DR: In this article, a mixed-dimensional van der Waals (vdW) photodiode with 2D Te and 1D CdS nanobelt is presented, which exhibits excellent self-powered photosensing performance and a broad response spectrum up to short-wave infrared.
Journal ArticleDOI
Electronic structure engineering of 2-D MoS2 sputtered thin films under ion beam irradiation: Induced by controlled defect generation
TL;DR: In this article, the effect of lattice defects on the electronic structure of transition metal dichalcogenides (TMDs) has been investigated in the domain of photonics, electronics, electrochemistry and energy.
References
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Journal ArticleDOI
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Journal ArticleDOI
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Yi-Hsien Lee,Xin-Quan Zhang,Wenjing Zhang,Mu-Tung Chang,Cheng-Te Lin,Kai-Di Chang,Ya-Chu Yu,Jacob Tse-Wei Wang,Chia-Seng Chang,Lain-Jong Li,Tsung-Wu Lin +10 more
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Journal ArticleDOI
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
TL;DR: This work shows that two-dimensional monolayer materials hold yet untapped potential for solar energy absorption and conversion at the nanoscale and demonstrates that 1 nm thick active layers can attain power conversion efficiencies of up to ~1%, corresponding to approximately 1-3 orders of magnitude higher power densities than the best existing ultrathin solar cells.
Journal ArticleDOI
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Sunkook Kim,Sunkook Kim,Aniruddha Konar,Wan Sik Hwang,Jong Hak Lee,Jiyoul Lee,Jaehyun Yang,Changhoon Jung,Hyoungsub Kim,Ji-Beom Yoo,Jae-Young Choi,Yong Wan Jin,Sang Yoon Lee,Debdeep Jena,Woong Choi,Woong Choi,Kinam Kim +16 more
TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.