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Journal ArticleDOI

Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy

TLDR
In this paper, a peak ZT of about 1.3 at 900°C in an n-type nanostructured SiGe bulk alloy has been achieved by using a nanostructure approach, mainly due to a reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries.
Abstract
The dimensionless thermoelectric figure of merit (ZT) of the n-type silicon germanium (SiGe) bulk alloy at high temperature has remained at about one for a few decades. Here we report that by using a nanostructure approach, a peak ZT of about 1.3 at 900 °C in an n-type nanostructured SiGe bulk alloy has been achieved. The enhancement of ZT comes mainly from a significant reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries. The enhanced ZT will make such materials attractive in many applications such as solar, thermal, and waste heat conversion into electricity.

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Citations
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Journal ArticleDOI

Bulk nanostructured thermoelectric materials: current research and future prospects

TL;DR: In this paper, the authors introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions.
Journal ArticleDOI

Semiconductor nanowires for energy conversion.

TL;DR: It is discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials.
Journal ArticleDOI

Nanostructured Thermoelectrics: Big Efficiency Gains from Small Features

TL;DR: This article sets out to summarize and clarify the current understanding in this field; explain the underpinnings of breakthroughs reported in the past decade; and provide a critical review of various concepts and experimental results related to nanostructured thermoelectrics.
Journal ArticleDOI

Perspectives on thermoelectrics: from fundamentals to device applications

TL;DR: In this article, Minnich et al. reviewed the progress made in thermoelectrics over the past two years on charge and heat carrier transport, strategies to improve the thermiolectric figure of merit, with new discussions on device physics and applications.
Journal ArticleDOI

Compromise and Synergy in High-Efficiency Thermoelectric Materials.

TL;DR: Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE performance, including band convergence, "phonon-glass electron-crystal", multiscale phonon scattering, resonant states, anharmonicity, etc.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
BookDOI

CRC Handbook of Thermoelectrics

TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Journal ArticleDOI

Enhanced thermoelectric performance of rough silicon nanowires

TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
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