Proceedings ArticleDOI
Evaluation of high-voltage cascode GaN HEMT in different packages
Zhengyang Liu,Xiucheng Huang,Wenli Zhang,Fred C. Lee,Qiang Li +4 more
- pp 168-173
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TLDR
In this paper, a stack-die package is introduced, which is able to eliminate all the critical common-source inductors in traditional package, avoiding side effects caused by the package, and thus could be more suitable for MHz high frequency operation.Abstract:
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing, which could possibly damage the gate of GaN HEMT, in hard-switching turn-off condition, due to package parasitics. To solve these problems a stack-die package is introduced, which is able to eliminate all the critical common-source inductors in traditional package, avoiding side effects caused by the package, and thus could be more suitable for MHz high frequency operation. A prototype of this stack-die package is fabricated in the lab, experimental results are shown to verify the analysis and to demonstrate the strength of the stack-die package.read more
Citations
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Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
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Characterization and Enhancement of High-Voltage Cascode GaN Devices
TL;DR: In this paper, the basic characteristics of a 600 V cascode GaN switch, such as voltage distribution during the turn-on and turn-off transition, were analyzed in detail, including the impact of the package parasitic inductance in both hard and soft switching modes.
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Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN Devices
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Application of GaN Devices for 1 kW Server Power Supply with Integrated Magnetics
TL;DR: In this paper, a 1 kW server power supply is demonstrated which employs an interleaved CRM totem-pole PFC followed with an LLC resonant converter, which achieves a power density more than 150 W/in, an efficiency above 96%, and much improved manufacturability with minimum labor content.
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A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation
TL;DR: In this paper, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation, where the parasitic ringing in hard-switching turn-off and switching losses in soft switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices.
References
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Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
Analytical loss model of power MOSFET
TL;DR: In this article, an accurate analytical model is proposed to calculate the power loss of a metal-oxide semiconductor field effect transistor (FET) by considering the nonlinearity of the capacitors and the parasitic inductance in the circuit, such as the source inductor shared by the power stage and driver loop, the drain inductor, etc.
Journal ArticleDOI
Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
TL;DR: In this paper, the authors presented a simulation model for high-voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in a cascode structure.
Journal ArticleDOI
Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
TL;DR: In this article, the authors presented an accurate analytical model to calculate the power loss of a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration.
Journal ArticleDOI
High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design
Shu Ji,David Reusch,Fred C. Lee +2 more
TL;DR: In this article, the performance of high-frequency GaN point-of-load (POL) converters with 3-D copackage is discussed. And the effect of parasitics on the performance is investigated.