Journal ArticleDOI
Formation and stability of silicides on polycrystalline silicon
TLDR
In this paper, the formation, morphology, and thermal stability of silicides on polysilicon is reviewed. But the authors focus on the formation of the silicide and its morphological stability during high temperature processing.Abstract:
Silicides are widely used in silicon integrated circuits as contacts and interconnections. In many applications silicides are used on polycrystalline silicon (polysilicon) such as the gates of FETs and the emitter of bipolar transistors. The use of silicide on polysilicon structures presents a number of unique challenges both in formation of the silicide and in morphological stability during high temperature processing. The purpose of this paper is to review the formation, morphology, and thermal stability of silicides on polysilicon. Mechanisms for silicide roughening on polysilicon are discussed including non-uniform initial reactions, agglomeration, and silicide enhanced grain growth. Results for silicides on polysilicon are compared with those on single crystal Si where relevant, A detailed description of silicide instability and device degradation is presented for a number of silicides, emphasizing TiSi 2 , CoSi 2 , and WSi 2 . Finally, methods for improving the stability of silicides on polysilicon are discussed.read more
Citations
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Journal ArticleDOI
Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
Journal ArticleDOI
Investigation of solid/vapor interfaces using ambient pressure X-ray photoelectron spectroscopy
TL;DR: This review summarizes the historical development of APXPS since its introduction over forty years ago, discusses different approaches to minimize scattering of electrons by gas molecules, and gives a comprehensive overview about the experimental systems (vapor/solid interfaces) that have been studied so far.
Journal ArticleDOI
Metal silicides in CMOS technology : Past, present, and future trends
Shi-Li Zhang,Mikael Östling +1 more
TL;DR: The metal silicides have played an indispensable role in the rapid development of microelectronics since PtSi was first used to improve the rectifying characteristics of diodes in early 1960s as discussed by the authors.
Journal ArticleDOI
Electrically programmable fuse (eFUSE) using electromigration in silicides
TL;DR: In this article, the authors describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE), which shows a large increase in resistance that enable easy sensing.
Journal ArticleDOI
High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
TL;DR: In this article, the thermodynamic and morphological stability of NiSi thin films was investigated for layers of thickness ranging from 10to60nm formed on either silicon-on-insulator (SOI), polycrystalline silicon, or preannealed poly-Si substrates.
References
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Book
Binary alloy phase diagrams
TL;DR: Binary Alloy Phase Diagrams, Second Edition, Plus Updates, on CD-ROM offers you the same high-quality, reliable data you'll find in the 3-volume print set published by ASM in 1990.
Book
Silicides for VLSI applications
TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.