Journal ArticleDOI
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
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TLDR
In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static andAbstract:
The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detailread more
Citations
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Quantum Transport in Semiconductor Nanostructures
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References
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Journal ArticleDOI
Energy spectra of donors in GaAs − Ga 1 − x Al x As quantum well structures in the effective-mass approximation
TL;DR: In this paper, the energy spectrum of the ground state and the low-lying excited states for shallow donors in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of
BookDOI
Light scattering in solids
TL;DR: In this article, the effect of long-range fluctuation in impurity potential on the Electron Light Scattering in Heavily Doped Semiconductors is discussed.
Journal ArticleDOI
Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond
Journal ArticleDOI
Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
P. J. Dean,D. G. Thomas +1 more
TL;DR: In this paper, the authors measured the optical absorption edge at many temperatures between 1.6 and 300\ifmmode^\circ\else\text degree\fi{}K in exceptionally perfect single crystals of gallium phosphide.
Journal ArticleDOI
Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
TL;DR: In this article, a method for calculation of refractive indices in III-V compounds at energies below the direct band edge is presented, where the spectral dependence of the refractive index data is analyzed on the basis of simplified models of the interband transitions.