Journal ArticleDOI
Geometric limits of coherent III-V core/shell nanowires
Reads0
Chats0
TLDR
In this paper, the authors demonstrate the application of a simple equilibrium model based on elasticity theory to estimate the geometric limits of dislocation-free core/shell nanowires (NWs).Abstract:
We demonstrate the application of a simple equilibrium model based on elasticity theory to estimate the geometric limits of dislocation-free core/shell nanowires (NWs). According to these calculations, in a coherent core/shell structure, tangential strain is the dominant component in the shell region and it decreases quickly away from the heterointerface, while axial strain is the dominant component in the core and is independent of the radial position. These strain distributions energetically favour the initial relief of axial strain in agreement with the experimental appearance of only edge dislocations with line directions perpendicular to the NW growth axis at the core/shell interfaces. Such dislocations were observed for wurtzite InAs/InP and zincblende GaAs/GaP core/shell NWs with dimensions above the coherency limits predicted by the model. Good agreement of the model was also found for experimental results previously reported for GaAs/InAs and GaAs/GaSb core/shell NWs.read more
Citations
More filters
Journal ArticleDOI
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch.
Leila Balaghi,Genziana Bussone,Raphael Grifone,René Hübner,Jörg Grenzer,Mahdi Ghorbani-Asl,Arkady V. Krasheninnikov,Harald Schneider,Manfred Helm,Manfred Helm,Emmanouil Dimakis +10 more
TL;DR: An engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap is reported, rendering gallium arsenide nanowires suitable for photonic devices across the near-infrared range.
Journal ArticleDOI
Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
Leila Balaghi,G. Bussone,R. Grifone,René Hübner,Joerg Grenzer,Mahdi Ghorbani-Asl,Arkady V. Krasheninnikov,Harald Schneider,Manfred Helm,Emmanouil Dimakis +9 more
TL;DR: In this paper, the GaAs core in GaAs/In(x)Ga(1-x)As/GaAs/Al(1 -x)Al( 1 -x )As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures.
Journal ArticleDOI
Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core–Shell Heterostructures
TL;DR: This work realizes arrays of extremely and controllably bent nanowires comprising lattice-mismatched and highly asymmetric core-shell heterostructures, demonstrating how bending in nanoheterostructURES opens up new degrees of freedom for strain and device engineering.
Journal ArticleDOI
Anomalous Strain Relaxation in Core–Shell Nanowire Heterostructures via Simultaneous Coherent and Incoherent Growth
TL;DR: This work uncovers a novel strain relaxation process in GaAs/InxGa1-xAs core-shell nanowires that is a direct result of the nanofaceted nature of these nanostructures.
Journal ArticleDOI
Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops
TL;DR: In this article, critical conditions of misfit stress relaxation in hollow core and hollow core-shell nanoparticles, bulk-and hollow core nanowires, and flat bi-and tri-nanolayers through generation of rectangular prismatic dislocation loops (PDLs) at the inner and outer interfaces of the composite nanostructures with subsequent extension of the PDLs into cores (substrates) or shells (films) are analyzed theoretically and discussed in detail.
References
More filters
Journal ArticleDOI
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
TL;DR: The rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
Journal ArticleDOI
Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
TL;DR: In this paper, a review of the theory and experimental work on stresses in III-V semiconductor heterostructures is presented, and the results of these calculations are used to determine stability and luminescence of the quantum wires and quantum dots.
Journal ArticleDOI
Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays.
TL;DR: The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively and compared to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.
Journal ArticleDOI
High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates
TL;DR: In this article, the photocurrent spectra of the nanowire heterojunctions have been investigated at room temperature to study the spectral responsivity and detectivity of the core-shell nanowires.