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Journal ArticleDOI

High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

F. De Angelis, +3 more
- 12 May 2005 - 
- Vol. 86, Iss: 20, pp 203505
TLDR
In this paper, a thin polymethylmetacrylate (PMMA) buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact and top contact configuration.
Abstract
A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact and top contact configuration. A PMMA buffer layer allows to reduce the interaction between a π-conjugated system of pentacene and the metal or dielectric substrate. We show that a thin PMMA buffer layer improves crystal quality along the metal contacts’ boundaries, while still allowing good ohmic contact. Pentacene TFTs, including a PMMA buffer layer, show very high field-effect mobility, μFE=0.65 and 1.4cm2∕Vs, for bottom and top contact configuration, respectively, and remarkable steep subthreshold region.

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Citations
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Journal ArticleDOI

Surface-Directed Molecular Assembly of Pentacene on Monolayer Graphene for High-Performance Organic Transistors

TL;DR: It is demonstrated that polymer residues remaining on graphene surfaces induce a stand-up orientation ofpentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport.
Journal ArticleDOI

Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

TL;DR: In this article, the performance of p-and n-type conducting polymer and small molecule organic semiconductors are reviewed primarily in terms of field effect mobility, current on/off ratio, and operating voltage for various OTFT structures.
Journal ArticleDOI

Anisotropic field effect mobility in single crystal pentacene

TL;DR: Fan-shaped electrodes were designed on Si∕SiO2 substrate to measure the anisotropic field effect mobility in freestanding single crystal pentacene as mentioned in this paper, and the highest mobility value was estimated to be ∼2.3cm2∕Vs at room temperature.
Journal ArticleDOI

Pentacene-based organic field-effect transistors

TL;DR: In this paper, the basic properties of pentacene films and crystals, and the characteristics of Pentacene FETs fabricated under various conditions, including their recent achievement of low-voltage operating high-mobility FET, are discussed.
Journal ArticleDOI

Application of admittance spectroscopy to evaluate carrier mobility in organic charge transport materials

TL;DR: In this article, the authors examined the feasibility of admittance spectroscopy and susceptance analysis in the determination of the charge-carrier mobility in an organic material and found that the susceptance is related to the carrier transport properties of the materials.
References
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Journal ArticleDOI

High-mobility polymer gate dielectric pentacene thin film transistors

TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
Journal ArticleDOI

Low-cost all-polymer integrated circuits

TL;DR: In this paper, a reproducible fabrication of field effect transistors in which the semiconducting, conducting, and insulating parts are all made of polymers is described, using spin-coating of electrically active precursors and pattern-wise exposure of the deposited films.
Journal ArticleDOI

Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport

TL;DR: In this paper, the structural and transport properties of evaporated pentacene organic thin film transistors (TFTs) are reported, and they show the influence of the deposition conditions with different inorganic dielectrics.
Journal ArticleDOI

Field-effect transistors on rubrene single crystals with parylene gate insulator

TL;DR: In this paper, the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene have been fabricated and the parylene polymer film has been used as the gate insulator.
Journal ArticleDOI

Organic electronics on paper

TL;DR: In this article, the authors fabricated organic thin-film transistors and ring oscillators on paper and on flexible polyetherether ketone film using small-molecule hydrocarbon pentacene as the semiconductor and solution-processed polyvinylphenol as the gate dielectric.
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