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Journal ArticleDOI

High-performance crystal oscillator circuits: theory and application

Eric A. Vittoz, +2 more
- 01 Jun 1988 - 
- Vol. 23, Iss: 3, pp 774-783
TLDR
A general theory that allows the accurate linear and nonlinear analysis of any crystal oscillator circuit is presented and a 2-MHz CMOS oscillator which uses amplitude stabilization to minimize power consumption and to eliminate the effects of nonlinearities on frequency is described.
Abstract
A general theory that allows the accurate linear and nonlinear analysis of any crystal oscillator circuit is presented. It is based on the high Q of the resonator and on a very few nonlimiting assumptions. The special case of the three-point oscillator, that includes Peirce and one-pin circuits, is analyzed in more detail. A clear insight into the linear behavior, including the effect of losses, is obtained by means of the circular locus of the circuit impedance. A basic condition for oscillation and simple analytic expressions are derived in the lossless case for frequency pulling, critical transconductance, and start-up time constant. The effects of nonlinearities on amplitude and on frequency stability are analyzed. As an application, a 2-MHz CMOS oscillator which uses amplitude stabilization to minimize power consumption and to eliminate the effects of nonlinearities on frequency is described. The chip, implemented in a 3- mu m p-well low-voltage process, includes a three-stage frequency divider and consumes 0.9 mu A at 1.5 V. The measured frequency stability is 0.05 p.p.m./V in the range 1.1-5 V of supply voltage. Temperature effect on the circuit itself is less than 0.1 p.p.m. from -10 to +60 degrees C. >

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Citations
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Journal ArticleDOI

An integrated CMOS micromechanical resonator high-Q oscillator

TL;DR: In this article, a monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator with the intent of achieving high stability.
Journal ArticleDOI

A review of MEMS oscillators for frequency reference and timing applications

TL;DR: In this article, a description of the key properties of a MEMS resonator that determine the overall performance of the MEMS oscillator is given and an overview is given of methods that have been demonstrated to improve the frequency stability.
Proceedings Article

Micropower Techniques

Journal ArticleDOI

A 300-/spl mu/W 1.9-GHz CMOS oscillator utilizing micromachined resonators

TL;DR: In this article, a low-power low-phase-noise 1.9 GHz RF oscillator is presented, which employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18/spl mu/m CMOS process.
Journal ArticleDOI

A Sub-100 $\mu$ W MICS/ISM Band Transmitter Based on Injection-Locking and Frequency Multiplication

TL;DR: This work introduces a new transmitter architecture based on cascaded multi-phase injection locking and frequency multiplication to enable low power operation and high global efficiency and eliminates slow phase/delay-locked loops for frequency synthesis.
References
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Journal ArticleDOI

CMOS analog integrated circuits based on weak inversion operations

TL;DR: In this paper, a simple model describing the DC behavior of MOS transistors operating in weak inversion is derived on the basis of previous publications and verified experimentally for both p-and n-channel test transistors of a Si-gate low-voltage CMOS technology.
Journal ArticleDOI

Adaptive biasing CMOS amplifiers

TL;DR: In this paper, two transconductance amplifiers are presented in which the concept of an input dependent bias current has been introduced, and the amplifiers combine a very low standby power dissipation with a high driving capability.
Proceedings ArticleDOI

A high density CMOS process

TL;DR: A 3μ CMOS process yielding circuit densities comparable to 1.5μ design rules will be reported, used to construct an 8b microcomputer for telecom use.
Journal ArticleDOI

Start-up time of CMOS oscillators

TL;DR: In this paper, the authors describe the evolution of signals in CMOS inverter-based oscillators during start-up and calculate the initial value of currents and voltages generated when power is applied to the inverter.