Journal ArticleDOI
High-speed dynamics of GaAsSb vertical-cavity lasers
TLDR
In this paper, the intensity noise spectrum was measured for antimonide based 1.3 /spl mu/m vertical-cavity surface emitting lasers with a modulation bandwidth of 5.7 GHz with an intrinsic maximum frequency response that exceeds 28 GHz.Abstract:
The intensity noise spectrum is measured for antimonide based 1.3 /spl mu/m vertical-cavity surface emitting lasers. Analysis of the noise spectra indicates a modulation bandwidth of 5.7 GHz with an intrinsic maximum frequency response that exceeds 28 GHz. A discontinuity in the relaxation oscillation resonance frequency is observed, which suggests that the lasing behavior at threshold is assisted by nonlinearities in the gain medium.read more
Citations
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Journal ArticleDOI
Recent Advances of VCSEL Photonics
TL;DR: Recent advances in VCSEL photonics for optical interconnects will be reviewed.
Journal ArticleDOI
InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
Victor M. Ustinov,Anton Yu. Egorov,Vladimir A. Odnoblyudov,Natalya V. Kryzhanovskaya,Yurii G. Musikhin,Andrey F. Tsatsul’nikov,Zhores I. Alferov +6 more
TL;DR: InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates as mentioned in this paper, and the effect of nitrogen concentration on the PL peak position and intensity has been studied.
Journal ArticleDOI
Auger and radiative recombination coefficients in 0.55-eV InGaAsSb
TL;DR: In this article, a radiofrequency photoreflectance technique was used to measure the recombination parameters in 0.55 eV InGaAsSb lattice matched to GaSb.
Journal ArticleDOI
Vertical Cavity Surface Emitting Lasers as Sources for Optical Communication Systems: A Review
TL;DR: In this paper, the basic operation of semiconductor lasers, structure analysis of the devices and parameter optimisation for optical communication systems are discussed and a comparison on different methods used for realising VCSELs are also looked into.
III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs
TL;DR: In this paper, a detailed discussion of the relevant underlying concepts for nonpolar VCSELs is presented, with the goal of illuminating the path forward for achieving efficient CW operating III-nitride VLSELs.
References
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Journal ArticleDOI
Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um
Kent D. Choquette,John F. Klem,Arthur J. Fischer,O. Blum,A. A. Allerman,I. J. Fritz,Steven R. Kurtz,William G. Breiland,R. M. Sieg,Kent M. Geib,J.W. Scott,R.L. Naone +11 more
TL;DR: In this article, the authors used two n-type As/GaAs distributed Bragg reflectors with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region.
Journal ArticleDOI
Amplitude squeezing in a pump-noise-suppressed laser oscillator.
TL;DR: It is suggested that a laser oscillator can produce an amplitude-squeezed state in itself if the pump amplitude fluctuation is suppressed below the ordinary shot-noise level.
Journal ArticleDOI
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
John D. Ralston,S. Weisser,Ignacio Esquivias,Eric C. Larkins,J. Rosenzweig,Paul J. Tasker,J. Fleissner +6 more
TL;DR: In this paper, the authors investigated changes in the modulation response, the differential gain delta g/ delta n, the nonlinear gain coefficient in, and the damping factor K, which result from three structural modifications to GaAs-based multiple quantum well lasers.
Journal ArticleDOI
1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
TL;DR: In this paper, the vertical cavity laser diodes were grown on GaAs substrates that employ GaInNAs multiquantum well active regions and AlAs-GaAs distributed Bragg reflectors.
Journal ArticleDOI
Spatial hole burning and self‐focusing in vertical‐cavity surface‐emitting laser diodes
TL;DR: In this article, the authors measured spatial hole burning in weakly index guided VCSELs by spatially and spectrally resolving the spontaneous emission near field above threshold and showed that spatial holes produce a significant lensing effect.