Proceedings ArticleDOI
High speed, high reliability Si-based light emitters for optical interconnects
A. Chatterjee,Bharat L. Bhuva +1 more
- pp 86-88
TLDR
In this paper, the reliability of Si-based p+-n+ diodes operating in avalanche breakdown mode was verified using a Hamamatsu streak camera for operation up to 50 psec of pulse width signals.Abstract:
The barrier to the industrial implementation of optical interconnects on an IC, center around the fabrication of optical elements on wafers through conventional Si processes. It has been shown previously that Si-based p+-n+ diodes operating in avalanche breakdown mode emit light in the 400-900 nm range. This paper focuses on demonstrating that these Si-based light emitters can operate in the GHz range and provide reliable operation. The modulation of the light emitter was verified using a Hamamatsu streak camera for operation up to 50 psec of pulse width signals. The reliability of these emitters was verified through accelerated AC, DC, and temperature stressing. None of the stressing methods altered the total junction light emission. Low current DC stressing, however, did cause reversible light coalescence. A model has been developed to explain this phenomena.read more
Citations
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Journal ArticleDOI
High-speed light Modulation in avalanche breakdown mode for Si diodes
TL;DR: In this paper, the limiting speed of light emission from a p-n junction in the forward bias region is determined by the transit time of the minority carriers across the junction during the filament formation of breakdown currents, which is demonstrated by simulation of the propagation of a shockwave-like pattern in the breakdown field.
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Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS
TL;DR: A maximum in inline-formula with LaTeX notation at relatively low voltages is attractive for monolithic opto-electronic integration in silicon and is compared with two recently proposedopto- electroluminescence models.
Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology
TL;DR: In this paper, the authors investigated the feasibility of realizing a monolithic optical link using silicon LEDs in a BCD silicon-on-insulator (SOI) CMOS technology, from a device physics viewpoint.
Proceedings ArticleDOI
Waveguide strategies for optical interconnect on CMOS
TL;DR: Optical waveguides offer a viable solution to the imminent global interconnect problem in CMOS integrated circuits and design primitives that can achieve acceptable performance, cost and reliability targets are proposed.
Proceedings ArticleDOI
Applications of CMOS processing to realize functional on-chip optical interconnects for VLSI
TL;DR: In this paper, the authors present a new proposition for optical interconnects integrated upon conventional CMOS devices, which can be developed to provide very effective optical functionality appropriate to alleviating high-speed communications and timing issues.
References
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Journal ArticleDOI
Optocoupler based on the avalanche light emission in silicon
TL;DR: In this article, a circuit of an input stage of an isolated amplifier is given using an optocoupler based on the avalanche light emission in silicon, where the photon energy of 1.1 eV is outside the visible part of the spectrum and is not sufficient to generate electronhole pairs in a silicon photodetector.
Journal ArticleDOI
New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress
TL;DR: Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported in this paper, where the observed drift in emitter−base breakdown voltage (Vebo) is well correlated to changes in forward base (Ib) and collector (Ic) currents.