High-Speed Silicon Photonics Modulators
Jeremy Witzens
- Vol. 106, Iss: 12, pp 2158-2182
Reads0
Chats0
TLDR
The focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation, with a sense of the limitations of current technology and the potential of novel hybrid material integration.Abstract:
The realization of gigahertz bandwidth modulators out of silicon-based technology in the early 2000s marked a cornerstone of silicon photonics development. While modulation speeds have since progressed well above 50 GHz and satisfy the bandwidth requirements of current and emerging modulation formats, concurrently obtaining low drive voltages and low insertion losses remains a very active area of research. While modulators generally come in two categories, direct absorption and those relying on embedded phase shifters, the focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation. The paper provides an overview of the current state of the art, as well as of currently explored improvement paths. First, common phase shifter configurations, aspects related to electrical driving, and associated power consumption are reviewed. Slow-wave, resonant, and plasmonic enhancements are further discussed. The reader is familiarized with the optimization of these devices and provided with a sense of the limitations of current technology and the potential of novel hybrid material integration.read more
Citations
More filters
Peer ReviewDOI
Integrated Subwavelength Grating Waveguide Bragg Gratings for Microwave Photonics
TL;DR: Subwavelength grating (SWG) waveguides and passive devices in silicon-on-insulator (SOI) have emerged as an enabler for developing break-through devices based on anisotropic metamaterials as discussed by the authors .
Proceedings ArticleDOI
Tuner-free lumped-element resonantly enhanced Mach-Zehnder modulator with ultra-wide operating wavelength range
TL;DR: In this paper , a resonantly enhanced Mach-Zehnder modulator utilizing highly overcoupled ring resonators with staggered resonances was demonstrated, achieving a 7nm 1dBpenalty operating range.
Journal ArticleDOI
Silicon Photonic Integrated Circuit for High-Resolution Multimode Fiber Imaging System
TL;DR: In this article , a silicon photonic integrated circuit (PIC) was proposed for exciting different spatial modes launched into a multimode-fiber (MMF) speckle imaging system.
Proceedings ArticleDOI
Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology
TL;DR: In this article , a fully differential lumped linear driver for optical modulators using the novel high performance 130 nm IHP SG13G3 BiCMOS technology, featuring f max
Journal ArticleDOI
Compact Slow-Light Integrated Silicon Electro-Optic Modulators With Low Driving Voltage
TL;DR: In this article , two slow-light enhanced silicon optical modulators with electro-optic phase shifter lengths of $500~\mu \text{m}
References
More filters
Journal ArticleDOI
A graphene-based broadband optical modulator
Ming Liu,Xiaobo Yin,Erick Ulin-Avila,Baisong Geng,Thomas Zentgraf,Long Ju,Feng Wang,Feng Wang,Xiang Zhang,Xiang Zhang +9 more
TL;DR: Graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
Micrometre-scale silicon electro-optic modulator
TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Journal ArticleDOI
Guiding and confining light in void nanostructure.
TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.