High-Speed Silicon Photonics Modulators
Jeremy Witzens
- Vol. 106, Iss: 12, pp 2158-2182
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TLDR
The focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation, with a sense of the limitations of current technology and the potential of novel hybrid material integration.Abstract:
The realization of gigahertz bandwidth modulators out of silicon-based technology in the early 2000s marked a cornerstone of silicon photonics development. While modulation speeds have since progressed well above 50 GHz and satisfy the bandwidth requirements of current and emerging modulation formats, concurrently obtaining low drive voltages and low insertion losses remains a very active area of research. While modulators generally come in two categories, direct absorption and those relying on embedded phase shifters, the focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation. The paper provides an overview of the current state of the art, as well as of currently explored improvement paths. First, common phase shifter configurations, aspects related to electrical driving, and associated power consumption are reviewed. Slow-wave, resonant, and plasmonic enhancements are further discussed. The reader is familiarized with the optimization of these devices and provided with a sense of the limitations of current technology and the potential of novel hybrid material integration.read more
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References
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High-speed plasmonic modulator in a single metal layer
Masafumi Ayata,Yuriy Fedoryshyn,Wolfgang Heni,Benedikt Baeuerle,Arne Josten,Marco Zahner,Ueli Koch,Yannick Salamin,Claudia Hoessbacher,Christian Haffner,Delwin L. Elder,Larry R. Dalton,Juerg Leuthold +12 more
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Journal ArticleDOI
Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- $\mu\hbox{m}$ Infrared Wavelength Range
TL;DR: In this paper, the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range were investigated, and it was shown that longer wave modulator designs will, in many cases, be different from those used in the telecom range.
Journal ArticleDOI
Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth
Peter O. Weigel,Jie Zhao,Kelvin Fang,Hasan Al-Rubaye,Douglas C. Trotter,Dana Hood,John Mudrick,Christina Dallo,Andrew Pomerene,Andrew Starbuck,Christopher T. DeRose,Anthony L. Lentine,Gabriel M. Rebeiz,Shayan Mookherjea +13 more
TL;DR: This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.
Journal ArticleDOI
Vertical junction silicon microdisk modulators and switches
TL;DR: Through the use of vertical junctions in resonant modulators, the lowest power consumption, lowest voltage, and smallest silicon modulators demonstrated to date are achieved.