High-Speed Silicon Photonics Modulators
Jeremy Witzens
- Vol. 106, Iss: 12, pp 2158-2182
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TLDR
The focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation, with a sense of the limitations of current technology and the potential of novel hybrid material integration.Abstract:
The realization of gigahertz bandwidth modulators out of silicon-based technology in the early 2000s marked a cornerstone of silicon photonics development. While modulation speeds have since progressed well above 50 GHz and satisfy the bandwidth requirements of current and emerging modulation formats, concurrently obtaining low drive voltages and low insertion losses remains a very active area of research. While modulators generally come in two categories, direct absorption and those relying on embedded phase shifters, the focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation. The paper provides an overview of the current state of the art, as well as of currently explored improvement paths. First, common phase shifter configurations, aspects related to electrical driving, and associated power consumption are reviewed. Slow-wave, resonant, and plasmonic enhancements are further discussed. The reader is familiarized with the optimization of these devices and provided with a sense of the limitations of current technology and the potential of novel hybrid material integration.read more
Citations
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Journal ArticleDOI
Design and Characterization of 10 Gb/s and 1 Grad TID-Tolerant Optical Modulator Driver
Gabriele Ciarpi,Simone Cammarata,Danilo Monda,Stefano Faralli,Philippe Velha,G. Magazzu,Fabrizio Palla,Sergio Saponara +7 more
TL;DR: In this article , a 10 Gb/s electronic driver for silicon Mach-Zehnder modulators (MZMs) is presented, which is able to operate in harsh environments characterized by radiation levels up to 1 Grad (SiO2) total ionizing dose (TID).
Electrode Design for Slow-Light based Mach-Zehnder Modulator in Silicon Photonics
TL;DR: In this paper, a comb-like delayed electrode design was proposed for a slow-light based Mach-Zehnder modulator, and the electro-optic bandwidth of the modulator was estimated considering optical and RF group indices, PN junction, and electrode design.
Journal ArticleDOI
Compact behavioral model and parametric extraction for optical phase shifters in carrier-depletion Mach–Zehnder silicon modulators
Tadashi Murao,Jun Ushida,Hiroyuki Takahashi,Masatoshi Tokushima,Akemi Shiina,Tsuyoshi Horikawa +5 more
TL;DR: In this article, a behavioral model of optical phase shifters is constructed for carrier-depletion Mach-Zehnder (MZ) silicon modulators in the push-pull regime.
Proceedings ArticleDOI
High-performance Silicon Quadplexer for Passive Optical Networks
TL;DR: This work realized the first silicon quadplexer with low excess losses of ~0.5 dB and the desired bandwidths for the wavelength-channels of 1270/1310/1490/1577 nm using multimode-waveguide-grating-based filters.
Proceedings ArticleDOI
Single-Pixel Imaging through Multimode Fiber using Silicon Optical Phased Array Chip
TL;DR: By driving 128 integrated phase shifters, speckle patterns are generated from the fiber to realize clear imaging with 490 resolvable points.
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