Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke
Zheng Zeng,Xin Zhang,Zhe Zhang +2 more
TLDR
It is turned out the low-cost DMC is easy to design and utilize without complex feedback circuits or control schemes, which is a cost-effective component to guarantee consistent and synchronous on–off trajectories of parallel SiC MOSFETs.Abstract:
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-capacity power converters. However, transient imbalance current, during turn- on and - off processes, challenges the safety and stability of parallel SiC MOSFETs. In this paper, considering the impact factors of device parameters, circuit parasitics, and junction temperatures, in-depth mathematical models are created to reveal the electrothermal mechanisms of the imbalance current. Moreover, with the incorporation of a differential mode choke (DMC), an effective approach is proposed to suppress the imbalance current among parallel SiC MOSFETs. Physics concepts, operation principles, and design guidelines of the DMC-based suppression method are fully presented. Besides, to reduce the equivalent leakage inductance and equivalent parallel capacitance of the DMC, winding patterns of the DMC are comparatively studied and optimized to suppress turn- off over-voltage and switching ringing. Concerning the influence of winding patterns, load currents, gate resistances, and junction temperatures, experimental results are comprehensively demonstrated to confirm the validity of theoretical models and the function of the proposed DMC-based suppression method. It is turned out the low-cost DMC is easy to design and utilize without complex feedback circuits or control schemes, which is a cost-effective component to guarantee consistent and synchronous on–off trajectories of parallel SiC MOSFETs.read more
Citations
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Journal ArticleDOI
Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules
Yang Wen,Yang Yuan,Gao Yong +2 more
TL;DR: An active gate driver (AGD) for high-power SiC MOSFETs is presented to balance the currents of parallel-connectedSiC M OSFET modules automatically and the effectiveness of AGD under different control topologies has been studied with simulation and verified using three parallel- connected SiCMOSFet modules.
Journal ArticleDOI
Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs With Kelvin-Source Connection
Cheng Zhao,Laili Wang,Fan Zhang +2 more
TL;DR: In this paper, the effect of power source parasitic inductance on dynamic current sharing is investigated for paralleled SiC mosfet s with Kelvin-source connection and some guidelines are provided for layout design and application.
Journal ArticleDOI
A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization
TL;DR: In this article, a nonlinear constrained optimization algorithm is proposed to adjust the connection points of bonding wires and traces to mitigate the mismatched dynamic current in multichip SiC power modules with Kelvin-source connection.
Journal ArticleDOI
Design of a Paralleled SiC MOSFET Half-Bridge Unit With Distributed Arrangement of DC Capacitors
TL;DR: In this article, a paralleled half-bridge unit is proposed to improve the transient current sharing performance, which is characterized by a distributed arrangement of dc capacitors, and the traditional power layout is optimized by the ANSYSEM cosimulation techniques.
Journal ArticleDOI
Desynchronizing Paralleled GaN HEMTs to Reduce Light-Load Switching Loss
TL;DR: In this article, a desynchronizable paralleling scheme was proposed to reduce the light-load switching loss of parallel HEMTs by adding commutation inductors at the midpoint of each paralleled HEMT half bridge.
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