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Open AccessJournal ArticleDOI

Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes

Aik-Yean Tang, +1 more
- 01 Aug 2011 - 
- Vol. 58, Iss: 10, pp 3260-3269
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TLDR
In this paper, the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes was analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz.
Abstract
In this paper, we present the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes. The high-frequency losses, particularly losses due to the spreading resistance, are analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz. A combination of 3-D electromagnetic (EM) simulations and parameter extraction based on lumped equivalent circuit is used for the analysis. The extracted low-frequency spreading resistance shows a good agreement with the results from electrostatic simulations and experimental data. By taking into consideration the EM field couplings, the analysis shows that the optimum ohmic-contact mesa thickness is approximately one-skin depth at the operating frequency. It is also shown that, for a typical diode, the onset of eddy current loss starts at ~ 200 GHz, and the onset of a mixture of skin and proximity effects occurs around ~ 400 GHz.

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Citations
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Journal ArticleDOI

Analytical Extraction of a Schottky Diode Model From Broadband $S$ -Parameters

TL;DR: In this paper, an analytic method was proposed to extract Schottky diode parasitic model parameters via a straightforward step-by-step procedure and evaluated using three sets of $S$ -parameter data.
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Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

TL;DR: In this paper, a three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters.
Journal ArticleDOI

Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers

TL;DR: In this paper, a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits is presented, where the nonlinear temperature responses of the material are taken into consideration by using a linear temperature-dependent approximation for the thermal resistance.
Journal ArticleDOI

Design and Characterization of Integrated Submillimeter-Wave Quasi-Vertical Schottky Diodes

TL;DR: In this paper, a new approach to realize vertically oriented Schottky diodes, with ohmic contact formed directly below the anode, that can be readily integrated into planar millimeter and submillimeter-wave circuits was reported.
Journal ArticleDOI

Design and Characterization of 1.8–3.2 THz Schottky-Based Harmonic Mixers

TL;DR: In this paper, a planar Schottky diode was integrated on a beam-lead THz circuit that uses a lower LO harmonic factor for 1.8-3.2 GHz.
References
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Book

High-Frequency Magnetic Components

TL;DR: In this paper, the authors present a complete study of the fundamental concepts in magnetic theory, including the skin effect and proximity effect, for high-frequency applications including switching-mode power supplies (SMPS) and resonant circuits.
Journal ArticleDOI

Empirical low-field mobility model for III-V compounds applicable in device simulation codes

TL;DR: In this paper, a Caughey-Thomas-like mobility model with temperature and composition dependent coefficients is used to describe the dependence of electron and hole mobilities on temperature, doping concentration, and alloy composition.
Journal ArticleDOI

Analysis of current crowding effects in multiturn spiral inductors

TL;DR: In this paper, current crowding is studied through approximate analytical modeling, and first-order expressions are derived for predicting resistance as a function of frequency, which is validated through comparisons with electromagnetic simulations and compared with measured data taken from a spiral inductor implemented in a silicon-on-sapphire process.
Journal ArticleDOI

Opening the terahertz window with integrated diode circuits

TL;DR: The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications as mentioned in this paper.
Journal ArticleDOI

Spreading Resistance in Cylindrical Semiconductor Devices

TL;DR: In this paper, the potential distribution of the spreading resistance of cylindrical semiconductor components is analyzed in graphical form for a range of geometrical parameters applicable to many practical situations.
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