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In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
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Using metalorganic vapor phase epitaxy to grow GaInAs/InP layers on masked InP substrates patterned with submicron square holes, the authors fabricated in situ buried quantum dot arrays for the first time.Abstract:
Using metalorganic vapor phase epitaxy to grow GaInAs/InP layers on masked InP substrates patterned with submicron square holes, we have fabricated in situ buried quantum dot arrays for the first time. Starting with mask openings ≥150 nm × 150 nm and utilizing the natural crystal habits to form low‐index plane facetted pyramids inside the holes, highly regular GaInAs quantum dots embedded in InP are obtained in a single growth step. As verified by cathodoluminescence, the dots exhibit very high luminescence efficiencies, even at room temperature, owing to the absence of air‐exposed or etch‐damaged heterointerfaces.read more
Citations
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Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures
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GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth
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Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy
Martin Heiß,Eva Riedlberger,D. Spirkoska,Max Bichler,Gerhard Abstreiter,Anna Fontcuberta i Morral +5 more
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References
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Journal ArticleDOI
Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes
TL;DR: InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 A.
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Optical spectroscopy of ultrasmall structures etched from quantum wells
TL;DR: In this paper, the photoluminescence and photoexcitation spectra of ultrasmall structures, referred to as quantum ribbons and quantum disks, were studied and compared.
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Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
TL;DR: In this article, the authors describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ∼350 A. The exciton energies agree with the theoretical predictions based on a new method of solving the two-dimensional effective mass Schrodinger equation.
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Threshold current density of GaInAsP/InP quantum-box lasers
TL;DR: In this paper, the laser threshold of three-dimensional GaInAsP/InP quantum-box arrays was analyzed and the ideal structure of the quantum box laser was discussed.
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Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
TL;DR: In this paper, the selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated, and a blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.