Journal ArticleDOI
Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
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TLDR
In this paper, the fabrication of thin GaAs quantum wires (120-200 A)×(200-300 A) by a novel metal-organic chemical-vapordeposition growth technique is reported.Abstract:
Successful fabrication of thin GaAs quantum wires (120–200 A)×(200–300 A) by a novel metal‐organic chemical‐vapor‐deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.read more
Citations
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Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
TL;DR: In this article, a few mololayers of InAs are heteroepitaxially grown on GaAs substrate by molecular beam epitaxy and structural and optical properties are investigated.
Journal ArticleDOI
Calculation of the energy levels in {InAs}/{GaAs} quantum dots
J.-Y. Marzin,G. Bastard +1 more
TL;DR: In this paper, a detailed effective mass calculation of the energy levels in InAs quantum dots embedded in GaAs is presented, and the results of a separable approximate treatment with a more complete numerical approach are compared.
Journal ArticleDOI
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
TL;DR: In this article, the state-of-the-art in local probe techniques for studying the properties of nanostructures, concentrating on methods involving monitoring the properties related to photon emission.
Journal ArticleDOI
Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
Shyun Koshiba,H. Noge,Hidefumi Akiyama,Takeshi Inoshita,Yusuke Nakamura,Akira Shimizu,Yasushi Nagamune,Masahiro Tsuchiya,Hideaki Kano,Hiroyuki Sakaki,Kazumi Wada +10 more
TL;DR: A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top as mentioned in this paper.
Journal ArticleDOI
Photoluminescence spectroscopy of crystalline semiconductors
TL;DR: An overview of the current state-of-the-art of photoluminescence (PL) spectroscopy as a characterization tool in the study of semiconductors is given in this article.
References
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Journal ArticleDOI
Multidimensional quantum well laser and temperature dependence of its threshold current
Yasuhiko Arakawa,H. Sakaki +1 more
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Journal ArticleDOI
Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
TL;DR: In this article, a carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs•GaAlAs system, which is attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.
Journal ArticleDOI
Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes
TL;DR: InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 A.
Journal ArticleDOI
Optical spectroscopy of ultrasmall structures etched from quantum wells
TL;DR: In this paper, the photoluminescence and photoexcitation spectra of ultrasmall structures, referred to as quantum ribbons and quantum disks, were studied and compared.
Journal ArticleDOI
Quantum noise and dynamics in quantum well and quantum wire lasers
TL;DR: In this paper, the relaxation oscillation corner frequency fr and linewidth enhancement factor alpha for both a quantum well and a quantum wire semiconductor laser were calculated and compared to those of a conventional double heterostructure device.
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