Influence of Defects on Solar Cell Characteristics
TLDR
In this article, the authors reviewed the present knowledge of the origin of non-ideal I-V characteristics of silicon solar cells and introduced new results on recombination involving coupled defect levels.Abstract:
The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.read more
Citations
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Study of Low Voltage Prebreakdown Sites in Multicrystalline Si Based Cells by the LBIC, EL, and EDS Methods
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TL;DR: In this article, the authors present theoretical foundations of application of reduced I-V Blaesser's characteristics in predicting a photovoltaic cell/module (PV) efficiency, together with calculation procedures.
Proceedings ArticleDOI
CIGS P3 scribes using ultra-short laser pulses and thermal annealing
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