Influence of Defects on Solar Cell Characteristics
TLDR
In this article, the authors reviewed the present knowledge of the origin of non-ideal I-V characteristics of silicon solar cells and introduced new results on recombination involving coupled defect levels.Abstract:
The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.read more
Citations
More filters
Proceedings ArticleDOI
Ideality factor behavior between the maximum power point and open circuit
TL;DR: In this paper, the RS-corrected local ideality factor was calculated for the series resistance effect in the plots of the I-V plots of crystalline-silicon (c-Si) PV cells.
Journal ArticleDOI
Sequential physical vapor deposited methylammonium lead tri-iodide perovskites on FTO and ITO modified zinc oxide nanorods for perovskite solar cells
TL;DR: In this article , a comparative study was conducted between methylammonium lead tri-iodide (MAPbI3)/zinc oxide (ZnO) nanorods (NRs) on fluorine-doped tin oxide (FTO) and indium-tin oxide (ITO) substrates for the first time.
Book ChapterDOI
Chapter Seven - Crystalline Silicon Feedstock Preparation and Analysis
Laszlo Fabry,Karl Hesse +1 more
TL;DR: In this paper, historical, present, and future trends in high-volume manufacturing (HVM) processes for polysilicon solar feedstock are reviewed and evaluated, and an interpretation of this trend is provided.
Journal ArticleDOI
Sequential physical vapor deposited methylammonium lead tri-iodide perovskites on FTO and ITO modified zinc oxide nanorods for perovskite solar cells
TL;DR: In this article, a comparative study was conducted between methylammonium lead tri-iodide (MAPbI3)/zinc oxide (ZnO) nanorods (NRs) on fluorine-doped tin oxide (FTO) and indium-tin oxide (ITO) substrates for the first time.
Journal ArticleDOI
Study of the Effects Related to the Electric Reverse Stress Currents on the Mono-Si Solar Cell Electrical Parameters
TL;DR: In this paper, the effect of reverse stress current injected in solar cell structure on the I-V and C-V characteristics under dark conditions at room temperature for several time periods.
References
More filters
Book
Metal-insulator transitions
TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.
Journal ArticleDOI
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
Book
Solar Cells: Operating Principles, Technology, and System Applications
TL;DR: In this paper, the solar source of light energy is described and quantified, along with a review of semiconductor properties and the generation, recombination, and the basic equations of photovoltaic device physics.
Book
Fundamentals of Solid State Electronics
TL;DR: In this article, a homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metaloxide-semiconductor capacitor P/N and other junction diodes metal-oxide semiconductor and other field effect transistors bipolar junction transistor and other bipolar transistor devices.
Related Papers (5)
Coupled defect‐level recombination: Theory and application to anomalous diode characteristics
Andreas Schenk,Ulrich Krumbein +1 more