Journal ArticleDOI
Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures
TLDR
The discrepancy in the measured gap-state density between the present method and the DLTS or ICTS techniques does not arise from the presence of surface states, but from differences in the electronic properties of a-Si:H.About:
This article is published in Solar Energy Materials.The article was published on 1982-11-01. It has received 8 citations till now. The article focuses on the topics: Surface states & Oxide.read more
Citations
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Journal ArticleDOI
Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current
TL;DR: In this paper, the authors measured the currentvoltage characteristics of amorphous silicon thin film transistors (a-Si TFTs) over a wide range of temperatures (20 to 160°C) and determined the activation energy of the channel current as a function of gate bias with emphasis on the leakage current and subthreshold regimes.
Journal ArticleDOI
Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells
I. Sakata,Y. Hayashi +1 more
TL;DR: It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis of photo-induced changes in a-Si∶H under high intensity light.
Journal ArticleDOI
Determination of distribution of states in hydrogenated amorphous silicon from capacitance‐voltage characteristics
Isaac Balberg,E. Gal +1 more
TL;DR: In this paper, an experimental method for the derivation of the state distribution in the pseudogap of an amorphous material is presented, based on capacitancevoltage (C•V) measurements and on transient capacitance interpretation.
Journal ArticleDOI
Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films
TL;DR: In this paper, surface and interface electronic properties of amorphous silicon nitride films were investigated by means of optical second harmonic generation (SHG) technique, and it was shown that the nonlinear field origins from isotropic interfaces (film/substrate interface and film/air interface) whose spectral features are ascribed to surface/interface Si dangling bonds and strained Si-Si bonds.
Journal ArticleDOI
Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide
A. Hadjadj,B. Equer +1 more
TL;DR: In this article, an in-situ Kelvin probe was used to study the boron doping of hydrogenated amorphous silicon (a-Si: H) and a-SiC: H films.
References
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Journal ArticleDOI
Surface states at steam-grown silicon-silicon dioxide interfaces
TL;DR: In this article, a method of determining the energy distribution of surface states at silicon-silicon dioxide interfaces by using low-frequency differential capacitance measurements of MOS structures is described.
Journal ArticleDOI
A quasi-static technique for MOS C-V and surface state measurements
TL;DR: In this paper, a quasi-static technique is proposed to obtain the thermal equilibrium MOS capacitance-voltage characteristics. The method is based on a measurement of the MOS charging current in response to a linear voltage ramp, so that the charging current is directly proportional to the incremental MOS capacity.
Journal ArticleDOI
Investigation of the density of localized states in a-Si using the field effect technique
TL;DR: In this article, the field effect technique is applied to the experimental study of N (ϵ) in specimens of a-Si prepared by the glow discharge method and by vacuum evaporation.
Journal ArticleDOI
Investigation of the localised state distribution in amorphous Si films
W. E. Spear,P. G. Le Comber +1 more
TL;DR: In this paper, field effect techniques have been used to determine the distribution function N (ϵ3) of the localised states in amorphous Si films prepared by glow discharge decomposition of silane.
Journal ArticleDOI
Electronic density of states in discharge‐produced amorphous silicon
M. Hirose,T. Suzuki,G. H. Döhler +2 more
TL;DR: The localized state density distribution in the mobility gap of glow-discharge amorphous silicon has been determined from capacitance-voltage characteristics for metal/oxide/amorphous silicon (MOS) structures.