Journal ArticleDOI
Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films
TLDR
In this article, a microelectro-mechanical system-based experimental technique was used to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain.Abstract:
We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)?1?at zero strain to 0.34 W (m K)?1?at about 2.4% tensile strain. We propose that such strong strain?thermal conductivity coupling is due to strain effects on fraction?phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.read more
Citations
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First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi 2 Se 3 and Bi 2 Te 3 including van der Waals interactions
TL;DR: In this paper, density functional theory calculations of the atomic, electronic, and thermoelectric properties of strained bulk and thin-film Bi{}_{2}$Se${}_{3}$ and Bi${}{2]$Te${}
Journal ArticleDOI
Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications
Huarui Sun,Roland B. Simon,James W Pomeroy,Daniel Francis,Firooz Faili,Daniel J. Twitchen,Martin Kuball +6 more
TL;DR: In this article, a combination of transient thermoreflectance measurement, finite element modeling and microstructural analysis is used to evaluate the thermal barrier at the GaN-to-diamond interface.
Journal ArticleDOI
Thermal Transport in Disordered Materials
Freddy DeAngelis,Murali Gopal Muraleedharan,Jaeyun Moon,Hamid Reza Seyf,Austin J. Minnich,Alan J. H. McGaughey,Asegun Henry +6 more
TL;DR: In this paper, the status of research on thermal/phonon transport in disordered materials is reviewed, including both structural and compositional disorder, and a review is provided.
Journal ArticleDOI
Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices
Luke Yates,Jonathan Anderson,Xing Gu,C. Lee,Tingyu Bai,Matthew Mecklenburg,Toshihiro Aoki,Mark S. Goorsky,Martin Kuball,Edwin L. Piner,Samuel Graham +10 more
TL;DR: Using time-domain thermoreflectance along with electron energy loss spectroscopy, it is determined that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 m2K/GW) because of the formation of an Si-C-N layer at the interface.
Journal ArticleDOI
Thermo-mechanical correlation in two-dimensional materials.
TL;DR: An advanced understanding of the mechanical and thermal properties of 2D materials is presented, which provides new opportunities for promoting their applications in nanoscale electronic, optoelectronic, and thermal functional devices.
References
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Journal ArticleDOI
Recent developments in thermoelectric materials
TL;DR: In this paper, the authors provide a critical summary of some recent developments of new concepts and new materials in thermoelectric materials research, including quantum wells, superlattices, quantum wires, and quantum dots.
Journal ArticleDOI
Polyethylene nanofibres with very high thermal conductivities.
TL;DR: The fabrication of high-quality ultra-drawn polyethylene nanofibres with diameters of 50-500 nm and lengths up to tens of millimetres were found and the thermal conductivity was found to be as high as approximately 104 W m(-1) K(-1), which is larger than the conductivities of about half of the pure metals.
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Measuring Thermal and Thermoelectric Properties of One-Dimensional Nanostructures Using a Microfabricated Device
TL;DR: In this paper, a microdevice consisting of two adjacent symmetric silicon nitride membranes suspended by long silicon-nitride beams for measuring thermophysical properties of one-dimensional manostructures (nanotubes, nanowires, and mmobelts) bridging the two membranes is fabricated.
Journal ArticleDOI
Heat transport in thin dielectric films
Seungmin Lee,David G. Cahill +1 more
TL;DR: In this article, heat transport in 20-300 nm-thick dielectric films is characterized in the temperature range of 78-400 K using the 3-ω method.
Journal ArticleDOI
Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well
TL;DR: In this article, the lattice thermal conductivity of a quantum well limited by umklapp, impurity, and boundary scattering was investigated theoretically by taking into account dispersion of confined acoustic-phonon modes.