Instabilities in crystal growth by atomic or molecular beams
TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).About:
This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.read more
Citations
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Book ChapterDOI
Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures
M. Suemitsu,S.N. Filimonov +1 more
TL;DR: In this paper, basic mechanisms of kinetic growth instabilities in epitaxial growth are described, and an overview of the strain relaxation mechanism in heteroepitaxial growing is given using the Ge/Si(111 and Ge /Si(001) systems as an example.
Journal ArticleDOI
Morphology of low-temperature homoepitaxial growth on laser-textured Ge(001)
TL;DR: The authors delineate the growth conditions of temperature, substrate vicinality, and hydrogen termination that produce rough and smooth crystal growth of Ge by molecular beam epitaxy, and characterize the morphologies by atomic-force microscopy.
Journal ArticleDOI
Equilibrium and dynamics of strained islands.
TL;DR: This work finds that the surface energy anisotropy increases the convexity of the chemical potential and this is shown to have an effect on the driving force for the coarsening.
Journal ArticleDOI
Various types of growth instabilities in coherent epitaxy
TL;DR: In this article, the instability of coherent epitaxial systems Ge/Si(0, 0, 1) is investigated and the qualitatively different features observed at low misfit and at larger misfit are explained by a different type of nucleation of new terraces.
Journal ArticleDOI
Control of the surface roughening in the epitaxial growth of manganite films
Florencio Sánchez,Ingrid C. Infante,Ll. Abad,U. Lüders,Ll. Balcells,Benjamín Martínez,Josep Fontcuberta +6 more
TL;DR: In this article, it was shown that the roughening is due to the formation of multilayered islands and that mounds do not appear if the growth is by step flow mechanism, although there is a marked step meandering.
References
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Book
Theory of elasticity
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Book
Theory of Dislocations
John Price Hirth,Jens Lothe +1 more
TL;DR: Dislocations in Isotropic Continua: Effects of Crystal Structure on Dislocations and Dislocation-Point-Defect Interactions at Finite temperatures.
Journal ArticleDOI
Free Energy of a Nonuniform System. I. Interfacial Free Energy
John W. Cahn,John E. Hilliard +1 more
TL;DR: In this article, it was shown that the thickness of the interface increases with increasing temperature and becomes infinite at the critical temperature Tc, and that at a temperature T just below Tc the interfacial free energy σ is proportional to (T c −T) 3 2.
Journal ArticleDOI
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.
Mario Norberto Baibich,J. M. Broto,Albert Fert,F. Nguyen Van Dau,Frédéric Petroff,P. Etienne,G. Creuzet,A. Friederich,Jean Chazelas +8 more
TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
Journal ArticleDOI
The kinetics of precipitation from supersaturated solid solutions
I.M. Lifshitz,V.V. Slyozov +1 more
TL;DR: In this paper, an analysis is made of the process whereby diffusion effects can cause the precipitation of grains of a second phase in a supersaturated solid solution, and the kinetics of this type of grain growth are examined in detail.