Instabilities in crystal growth by atomic or molecular beams
TLDR
In this paper, a review of the most frequent instabilities in ballistic growth is presented, which are mostly kinetic (when the desired state cannot be reached because of a lack of time) or thermodynamic (when a desired state is unstable).About:
This article is published in Physics Reports.The article was published on 2000-02-01 and is currently open access. It has received 235 citations till now.read more
Citations
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Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
TL;DR: In this paper, the authors describe submonolayer nucleation and growth of two-dimensional islands during deposition and show that the traditional mean-field treatment is quite successful in capturing the behavior of mean island densities, but it fails to predict island size distributions.
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Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering
Wai-Lun Chan,Eric Chason +1 more
TL;DR: A review of different mechanisms that have been proposed and how they fit together in terms of the kinetic regimes in which they dominate is provided in this paper, with a comparison between theory and experiment is used to highlight strengths and weaknesses in their understanding.
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Self-organization of nanostructures in semiconductor heteroepitaxy
TL;DR: In this article, the authors analyzed the driving forces of self-organization mechanisms in semiconductor heteroepitaxy and showed that under certain conditions, these mechanisms and their interplay result in self-organized nanostructure arrays with a high degree of uniformity.
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Crystal surfaces in and out of equilibrium: A modern view
TL;DR: In this article, a review of the last two decades of progress in the theory of crystal surfaces in and out of equilibrium is reviewed, focusing on step meandering and bunching, which are two main forms of instabilities encountered on vicinal surfaces.
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Growth and self-organization of SiGe nanostructures
TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.
References
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Topography of the Si(111) surface during silicon molecular-beam epitaxy.
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Stable configurations in strained epitaxial layers
TL;DR: In this paper, two guiding principles for the determination of stable configurations in strained epitaxial layers (epilayers) are considered: the Matthews-Blakeslee force balance model states that strain relaxation will occur via threading motion until the force due to the relaxed strain is insufficient to drive a dislocation across the epilayer.
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Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition
Marcello Colocci,Franco Bogani,L. Carraresi,R. Mattolini,A. Bosacchi,S. Franchi,Paola Frigeri,M. Rosa-Clot,Stefano Taddei +8 more
TL;DR: In this article, the individual bands of the photoluminescence spectra after low excitation were ascribed to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.
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Formation of pyramids and mounds in molecular beam epitaxy.
Martin Siegert,Michael Plischke +1 more
TL;DR: This work proposes and investigates by computer simulation a simple microscopic model that displays slope selection, pyramid and moundlike structures, and coarsening, and discusses these results in the light of recent experiments and continuum models of molecular beam epitaxy.
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On the shape of wedding cakes
TL;DR: In this article, the large-scale morphology of a growing surface is characterized for a simple model of crystal growth in which interlayer transport is completely suppressed due to the Ehrlich-Schwoebel effect, and expressions for the number of exposed layers as a function of coverage and diffusion length are derived.